A high performance hybrid broadband photodetector with graphene/nitrogen-functionalized graphene quantum dots (NGQDs@GFET) is developed using boron nitride nanosheets (BN-NSs) as a buffer layer to facilitate the separation and transport of photoexcited carriers from the NGQD absorber. The NGQDs@GFET photodetector with the buffer layer of BN-NSs exhibits enhanced photoresponsivity and detectivit...

Organic photodetectors are interesting for low cost, large area optical sensing applications. Combining organic semiconductors with discrete absorption bands outside the visible wavelength range with transparent and conductive electrodes allows for the fabrication of visibly transparent photodetectors. Visibly transparent photodetectors can have far reaching impact in a number of areas includin...

Zinc oxide is potentially a useful material for ultraviolet detectors; however, a relatively long response time hinders practical implementation. Here by designing and fabricating a self-powered ZnO/perovskite-heterostructured ultraviolet photodetector, the pyroelectric effect, induced in wurtzite ZnO nanowires on ultraviolet illumination, has been utilized as an effective approach for high-per...

A voltage tunable quantum dot (QD) photodetector for terahertz detection based on intersublevel transitions is proposed. The intersublevels are formed by the lateral electrical confinement applied on quantum wells and the transitions between them can be strongly tuned by the confinement. Under normal incidence, the peak detection wavelengths can be tuned from ∼50 to ∼90μm (6.0 to ∼3.3 THz) with...

We present a novel Nipkow disk design for terahertz (THz) single pixel imaging applications. A 100 mm high resistivity (ρ≈3k-10k Ω·cm) silicon wafer was used for the disk on which a spiral array of twelve 16-level binary Fresnel lenses were fabricated using photolithography and a dry-etch process. The implementation of Fresnel lenses on the Nipkow disk increases the THz signal transmission comp...

We present the design simulation and characterization of a quantum cascade detector operating at 4.3μm wavelength. Array integration and packaging processes were investigated. The device operates in the 4.3μm CO2 absorption region and consists of 64 pixels. The detector is designed fully compatible to standard processing and material growth methods for scalability to large pixel coun...

In this paper we report the fabrication, design and testing of an uncooled infrared imager based on an active pixel heat balancing technique. The imager is fabricated using a commercial CMOS process plus a simple electrochemical etch stop releasing step. The basic active pixel detector structure consists of a simple cascode CMOS amplifier in which the PMOS devices are built inside a thermally-i...

Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite-based photodetectors exploited to date are centered on Pb-based perovskites, which only afford spectral response across the visible...

Terahertz detection capability of an n-type heterojunction interfacial work function internal photoemission (HEIWIP) detector is demonstrated. Threshold frequency, f0, of 3.2 THz (93 lm) was obtained by using n-type GaAs emitter doped to 1 · 10 cm 3 and Al0.04Ga0.96As single barrier structure. The detector shows a broad spectral response from 30 to 3.2 THz (10–93 lm) with peak responsivity of 6...

In this paper, we demonstrate high optical quantum efficiency (90%) resonant-cavity-enhanced mid-infrared photodetectors fabricated monolithically on a silicon platform. High quality photoconductive polycrystalline PbTe film is thermally evaporated, oxygen-sensitized at room temperature and acts as the infrared absorber. The cavity-enhanced detector operates in the critical coupling regime and ...