Scaling of metal-oxide-semiconductor transistors to smaller dimensions has been a key driving force in the IC industry. This work analysis the gate leakage current behavior of nano scale MOSFET based on TCAD simulation. The Sentaurus Simulator simulates the high-k gate stack structure of N-MOSFET for analysis purpose. The impact of interfacial oxide thickness on the gate tunneling current has b...

As the continuous down scaling of MOSFET device is required to increase the speed and packaging density of it, but it reduces the device characteristics in terms of short channel effect and reverse leakage current. At present, the single gate MOSFET reaching its scaling limit. These limitations associated with scaling give birth to number of innovative techniques which includes the use of diffe...

This paper is investigated the low frequency noise behavior in subthreshold regime of gate-all-around silicon nanowire field effect transistors. Downscaling of multi gate structure beyond 50 nm gate length describes the quantum confinement related model. A drain current model has been described for output characteristics of silicon nanowire FET that is incorporated with velocity saturation effe...

In this paper we study the feasibility of design/fabrication a vertical trench 4H-SiC Junction Field Effect Transistor (JFET), assuming realistic constraints depth P+ implantation. The doping profile is obtained using Monte Carlo implantation simulation. calculation used drift-diffusion approach. JFET aims to achieve threshold voltage of-3V. We found that constraint in concomitance with propose...

In this paper, we have proposed a 2D analytical model for Asymmetric gate stack triple metal MOSFET(AGSTMGAAFET) and performed comparative analysis with the simulation results obtained using SILVACO 3D software. Existing devices such as all around single (SMGAAFET), (TMGAAFET), (GSSMGAAFET), (GSTMGAAFET) asymmetric (AGSTMGAAFET) been compared our structure AGSTMGAAFET. Our device provides excel...

In this paper a modified junctionless transistor is proposed. The aim of the novel structure controlling off-current using π-shape silicon window in buried oxide under source and channel regions. changes potential profile region which conduction band energy get away from body Fermi rebuild an electrostatic potential. Beside significant reduced off-current, on current has acceptable value Silico...

This paper describes the impression of low-k/high-k dielectric on performance Double Gate Junction less (DG-JL) MOSFET. An analytical model threshold voltage DG-JLFET has been presented. Poisson’s equation is solved using parabolic approximation to find out voltage. The effect high-k various parameters N-type explored. comparative analysis carried between conventional gate oxide, multi oxide an...

The emergence of fin-shaped field effect transistors (FinFETs) was governed by the requirement VLSI industry to include more functionalities per unit chip area. Enhanced gate control in a FinFET due surrounding architecture built on fundamental geometry MOSFET made them highly compatible existing CMOS circuit applications. announcement vertically stacked multiple structure named as Ribbon-FET I...