III-V compound multijunction solar cells enable ultrahigh efficiency performance in designs where subcells with high material quality and high internal quantum efficiency can be employed. However the optimal multijunction cell bandgap sequence cannot be achieved using lattice-matched compound semiconductor materials. Most current compound semiconductor solar cell design approaches are focused o...

In this paper, we present a new technic based on t transient diffusion capacitance of the bifacial solar cell back surface recombination velocity (Sb) and the grain boundary recombination velocity (Sgb), we resolved the continuity equation in the base of the solar cell under monochro diffusion capacitance profile which decreases with the dynamic junction velocity (Sf), the back surface recombin...

High bandgap perovskite solar cells are integral to perovskite-based multi-junction tandem with efficiency potentials over 40%. However, at present, high devices underperform compared their mid counterparts in terms of voltage outputs and fill factors resulting lower than ideal efficiencies. Here, the low factor aspect is addressed by developing a cation-diffusion-based double-sided interface p...

Vertically aligned radial-junction solar cell designs offer potential improvements over planar geometries, as carrier generation occurs close to the junction for all absorption depths, but most production methods still require a single crystal substrate. Here, we report on the fabrication of such solar cells from polycrystalline, low purity (99.98%) p-type silicon starting material, formed into...

Abstract The luminescent coupling effect in multi-junction solar cell is a phenomenon where extra photocurrent one sub-cell driven by radiative recombination of electron–hole pairs another sub-cell. This paper focuses on the analysis modeling cell. These modelings are based two-diode equivalent circuit. Finally, it concludes that study requires not only suitable but also good experimental metho...

This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction cells were grown epitaxially lattice matched GaAs wafers using metalorganic vapor phase epitaxy. By optimizing growth temperature V/III ratio we could increase open-circu...

Triple-junction a-Si based solar cells, having a structure ofSS/Ag/ZnO/n/n/b/a-SiGe-i/b/p/p/n/n/b/a-SiGe-i/b/p/p/n/n/a-Si-i/p/p/ITO, are fabricated at the University of Toledousing a multi-chamber, load-locked PECVD system. We studied the effect of heavily doped pand n layers deposited at the tunnel junction interfaces between the top and middle componentcells and between th...

H arvesting solar energy is an important objective to fulfill the evergrowing energy demand. As a result, several new types of solar cells (SCs) have been introduced and discussed over the last two decades based onmaterials and principles that are quite different from the original crystalline Si p-n junction cell. 4 The quest for higher efficiency and lower production cost SCs with extended lif...

Hydrogen plasma reduction of fluorine doped tin oxide is a beneficial method to form nanodroplets on the sample surface directly in plasma-enhanced chemical vapor deposition reactor. The formation catalyst droplets crucial initial step for vapor-liquid-solid growth silicon nanowires radial junction solar cells and fuel cell technology. We present an original optical model which allows us trace ...

Kesterite Cu2ZnSn(SxSe1−x)4 has tunable band-gap values in the range 1 to 1.5 eV depending upon Sulphur/Selenium stoichiometry. We analyze proposed tandem configuration of kesterite absorber family using SCAPS-1D for device performance. Pure sulphide Cu2ZnSnS4 (CZTS) bandgap is utilized as top cell and a sulpho-selenide (CZTSSe) 1.1 bottom stacked configuration. utilize script file capability S...