1 Ph.D. Candidate 2 Corresponding Author, Professor Abstract Electromigration is a reliability concern of microelectronic interconnections, especially for flip chip solder bump with high current density applied. This study shows that with the line-to-bump geometry in a flip chip solder joint, the current density changes significantly between the Al trace and the bump, while the current crowding...

Introduction Reliability is an ongoing, crucial part of the microelectronics industry as companies continue to increase the population of I/O connections and shrink package dimensions. As outlined in the International Technology Roadmap for Semiconductors (ITRS), this trend causes increased current density in solder joints, making electromigration the limiting reliability factor in high density...

This paper presents a numerical study on the mechanism of chloride migration in concrete. Unlike most of existing work, this study utilises multicomponent ionic transport models to reflect the influence of ionic interactions by coupling both mass conservation and Poisson’s equations. A series of 2-D, 3-phase models with different shapes and volume fractions of aggregates are developed to simula...

This paper presents a comprehensive analysis of the themal effects in advanced high performance interconnect systems arising due to selfheating under various circuit conditions, including electrostatic discharge. Technology (Cu, low-k etc) and scaling effects on the thermal characteristics of the interconnects, and on their electromigration reliability has been analyzed simultaneously, which wi...

We have analyzed the stress build-up and vacancy dynamics due to material transport caused by electromigration in dual-damascene interconnect structures. Our model incorporates all relevant driving forces for material transport with a complete integration of mechanical stress in connection with microstructural aspects. First, it is shown that the addition of redundant vias can be effective in i...

Abstract Oxygen electromigration applied to a YBa 2 Cu 3 O 7 ? ? nanowire can be used tune its electrical properties. Here, we apply YBCO nanowire-based superconducting quantum ...

Memristors have recently generated significant interest due to their potential use in nanoscale logic and memory devices. Of the four passive circuit elements, the memristor (a two-terminal hysteretic switch) has so far proved hard to fabricate out of a single material. Here we employ electromigration to create a reversible passive electrical switch, a memristive device, from a single-component...

In Cu metallization, refractory metal liners at vias generally block electromigration. As liner thicknesses are decreased, fully-blocking liners at vias become less certain due to liner ruptures. We have developed and exercised a reliability CAD tool, SysRel, for circuit-level interconnect reliability assessments, and used it to assess the impact of non-blocking vias on circuit-level reliabilit...

With the increase in current densities, electromigration has become a critical concern in high-performance designs. Typically, electromigration has involved the process of time-domain simulation of drivers and interconnect to obtain average, RMS, and peak current values for each wire segment. However, this approach cannot be applied to large problem sizes where hundreds of thousands of nets mus...

Single-layer atom or vacancy clusters in the presence of electromigration are studied theoretically assuming an isotropic medium. A variety of distinctive behaviors distinguish the response in the three standard limiting cases of periphery diffusion ~PD!, terrace diffusion, and evaporation-condensation. A general model provides power laws describing the size dependence of the drift velocity in ...