We deduce the equations that describe how polarized radiation is Comptonized by a hot electron gas. Low frequencies are considered, and the equations are expanded to second order in electron velocities. Induced scattering terms are included and a Maxwellian velocity distribution for the electrons is assumed. The special case of an axisymmetric radiation field is also considered, and the corresp...

LLE Review, Volume 126 66 Introduction High-energy electrons are detrimental to laser fusion because they can preheat the fuel, preventing the high compression necessary for central hot-spot ignition and high gain.1 The direct-drive approach is particularly vulnerable as a result of the long scale length of plasma that exists at the quarter-critical density of the target, although it can also o...

Title of thesis: Hot Electron Injection into Uniaxially Strained Silicon Hyun Soo Kim, Master of Science, 2013 Thesis directed by: Professor Ian Appelbaum Department of Physics In semiconductor spintronics, silicon attracts great attention due to its long electron spin lifetime. Silicon is also one of the most commonly used semiconductor in microelectronics industry. The spin relaxation process...

Using our physics based model for hot-carrier degradation (HCD) we analyze the effect of electron-electron scattering (EES) on HCD in devices with different channel lengths. We show that – in contrast to recent suggestions – EES does play a crucial role in ultra-scaled MOSFETs and can be important also in long transistors with the lengths as long as 300nm.

Article history: Received 23 May 2015 Accepted 16 June 2015 Available online xxxx Weperformed thermal and constant voltage stress on oligothiophene-based p-type organic thin-film-transistors. The devices subjected to thermal stress without bias showed limited variations. The bias stress performed at 20 °C inducedmonotonic charge trapping, andmobility degradation. The devices subjected to simult...

Consensus reached in the last few years that fourth generation light source will most likely be a X-ray or a UV coherent source based on single-pass high-gain free electron laser (FEL), such as Self Amplified Spontaneous Emission (SASE), or seeded high-gain harmonic -generation (HGHG) free electron lasers. High -gain (> 10) required for single-pass FEL puts great constrain on the quality of ele...

We present a density functional theory (DFT) study aimed at understanding the injection and recombination processes that occur at the interface between PbS QDs and TiO2 oxide nanoparticles with different morphologies. The calculated injection rates fall in the picosecond timescale in good agreement with the experiments. In addition, our simulations show that the (101) facet of TiO2 more favoura...

Abstract-Silicon, the main material of microelectronics, is perfectly suited for spin-driven applications. All-electrical spin injection in silicon has been demonstrated, however, the magnitude of the corresponding signal is larger than theoretically predicted. We analyze the influence of electrostatic charge screening on the efficiency of spin injection at the ferromagnet-semiconductor interfa...

in this research, the effects of oxygen injection during the induration process were studied in order to improve the quality specifications and increase the rate of production of the iron oxide pellets. several experiments were carried out in palletizing pilot plant in different conditions of oxygen injection. the results suggested that if only the extra oxygen was injected into the furnace in ...