We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)(0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC het...

We report first-principles calculations on the coupling between epitaxial strain, polarization, and oxygen octahedra rotations in monodomain (PbTiO(3))(n)/(SrTiO(3))(n) superlattices. We show how the interplay between (i) the epitaxial strain and (ii) the electrostatic conditions can be used to control the orientation of the main axis of the system. The electrostatic constrains at the interface...

We report the observation of an unusual phase assembly behavior during the growth of hexagonal LuFeO(3) thin films which resulted in the formation of epitaxial Fe(3)O(4) nanolayers. The magnetite layers were up to 5 nm thick and grew under the conditions at which Fe(2)O(3) is thermodynamically stable. These Fe(3)O(4) nanolayers act as buffer layers promoting a highly epitaxial growth of the hex...

Graphene, a two-dimensional sheet of carbon atoms, is a promising material for next-generation technology because of its advantageous electronic properties, such as extremely high carrier mobilities. However, chemical functionalization schemes are needed to integrate graphene with the diverse range of materials required for device applications. In this paper, we report self-assembled monolayers...

The high electrical and drastically-low thermal conductivities, a vital goal for high performance thermoelectric (TE) materials, are achieved in Si-based nanoarchitecture composed of Si channel layers and epitaxial Ge nanodots (NDs) with ultrahigh areal density (~10(12) cm(-2)). In this nanoarchitecture, the ultrasmall NDs and Si channel layers play roles of phonon scattering sources and electr...

.Abstract-Large-area siliconp-i-n photodetectors with an epitaxial thickness ranging from IO-20 pm were fabricated. The photodiode bandwidth, responsivity, capacitance and dark current were characterized as a function of the epilayer thickness. The determination of these parameters is important to facilitate the designing of photodiodes in which the trade-off between various parameters need to ...

In molecular beam epitaxy (MBE) of semiconductors the goal is to synthesize a highly ordered crystalline film layer by layer so that the arrangement of atoms is well defined. For example, one might want to construct superlattices which consist of alternate bands of GaAs and AlAs which are four atomic layers thick [ 1 ] or to dope boron into silicon in a highly controlled fashion. To obtain epit...

Graphene, a hexagonal sheet of sp(2)-bonded carbon atoms, has extraordinary properties which hold immense promise for nanoelectronic applications. Unfortunately, the popular preparation methods of micromechanical cleavage and chemical exfoliation of graphite do not easily scale up for application purposes. Epitaxial graphene provides an attractive alternative, though there are many challenges, ...

Terrace formation in semiconductor epitaxial layers has been postulated to cause lattice bending, which ought to be observable by x-ray diffraction. Consideration of dynamical effects of x-ray reflection, both at the terraces and from a distorted crystal lattice, shows that diffraction effects by far outweigh the effects oflattice bending. For a given liquid phase epitaxial GaAs layer on a GaAs...

Chlorine in a nitrogen ambient is used to clean silicon surfaces of impurities by etching a thin layer from the surface prior to silicon epitaxial growth. Silicon etch rates of 1-10 nm/min could be achieved for temperatures from 525C to 575C. The etching of a thin layer of silicon from the surface is also capable of removing phosphorus from the surface, which conventionally is difficult to remo...