Opening a sizable band gap without degrading its high carrier mobility is as vital for silicene as for graphene to its application as a high-performance field effect transistor (FET). Our density functional theory calculations predict that a band gap is opened in silicene by single-side adsorption of alkali atom as a result of sublattice or bond symmetry breaking. The band gap size is controlla...

A novel horizontally aligned single-walled carbon nanotube (CNT) Field Effect Transistor (FET)-based biosensing platform for real-time and sensitive protein detections is proposed. Aligned nanotubes were synthesized on quartz substrate using catalyst contact stamping, surface-guided morphological growth and chemical vapor deposition gas-guided growth methods. Real-time detection of prostate-spe...

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting ...

We implemented spatial mapping of charge carrier density in the channel of a conventional polymer Field-Effect Transistor (FET) by mid-infrared Charge Modulation Spectroscopy (CMS). CMS spectra are recorded with a high sensitivity confocal Fourier Transform Infra-Red (FTIR) microscope by probing electroinduced Infra-Red Active Vibrational (IRAV) modes and low-energy polaron bands in the spectra...

In conventional electronic devices such as field-effect transistors (FETs) or diodes, the size of the device is usually quite large, so that the wave nature of the electron or its discrete charge do not influence the behavior of the device. Furthermore, all individual components of these devices are of a size much larger than an individual atom. However, with the continuous shrinking of integra...

Polarized infrared optical emission was observed from a carbon nanotube ambipolar field-effect transistor (FET). An effective forward-biased p-n junction, without chemical dopants, was created in the nanotube by appropriately biasing the nanotube device. Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simult...

Chip scale, high sensitivity magnetic sensor arrays capable of sensing below 100 picoTesla vector fields are of great interest to biomedical applications such as noninvasive medical imaging and diagnosis. Here, we present an integrated magnetoelectric resonant gate transistor (ME RGT) with nanoTesla magnetic field detection sensitivity. The device integrates Titanium (Ti)-Metglas (Fe0.85B0.05Si...

A novel recognition method for selective determination of the hyoscine N-Butyl bromide (HBB), an antispasmodic agent for smooth muscles, was devised using extended gate field-effect transistor (EG-FET) as transducing unit. For this purpose a PVC membrane, containing hyoscine n-butyl-tetraphenyl borate ion-pair as recognition component, was coated on Ag/AgCl wire, which was connected to the exte...

A reusable extended-gate field-effect transistor (FET) sensor with an 11-ferrocenyl-1-undecanethiol (11-FUT) modified gold electrode was developed for applying to enzyme immunoassay. It was found that the 11-FUT modified FET sensor detected a thiol compound 50 times or more repeatedly after a treatment with a 5% hydrogen peroxide solution. The gate-voltage shift of the FET sensor showed a fairl...

Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing stable static in non-transient non-hysteretic regime remains a daunting task. The problem stems from lack understanding how origin NC due emergence domain state can be put use for implementing...