نتایج جستجو برای: function negf formalism

تعداد نتایج: 1242621  

2016
Danqiong Hou Yuhui He Xiaoyan Liu Jinfeng Kang Jie Chen Ruqi Han

We present a numerical method in this paper to calculate time-dependent transport properties in mesoscopic systems. This method recursively computes the non-equilibrium Green’s functions (NEGF) in the time domain. In the simulations, we utilize a dynamically allocated data structure to compute current densities in response to input signals of any time duration and arbitrary shape. To demonstrat...

M. Fathipour Z. Ahangari,

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

2003
Jing Guo Supriyo Datta Mark Lundstrom

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNT...

2010
Terence D. Musho Sarah M. Claiborne D. Greg Walker

Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission...

2012
Fatemeh Karimi Morteza Fathipour Hamdam Ghanatian Vala Fathipour

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, tri...

Journal: :international journal of nano dimension 0
j. jahanbin sardroodi molecular simulation lab., azarbaijan shahid madani university, tabriz, iran. s. afshari molecular simulation lab., azarbaijan shahid madani university, tabriz, iran. a. r. rastkar ebrahimzadeh molecular simulation lab., azarbaijan shahid madani university, tabriz, iran. m. abbasi molecular simulation lab., azarbaijan shahid madani university, tabriz, iran.

the quantum transport computations have been carried on four different width of zigzag graphene using a nonequilibrium green’s function method combined with density functional theory. the computed properties are included transmittance spectrum, electrical current and quantum conductance at the 0.3v as bias voltage.  the considered systems were composed from one-layer graphene sheets differing w...

Journal: :Physical review 2021

The electronic properties of antimonene, single-layer Sb, are attracting great attention. In this paper, spin transport in armchair antimonene nanoribbon (ASbNR) is investigated. Following the tight-binding model, we calculate both transmission probability and conductance by means non-equilibrium Green's function (NEGF) method. effects an external electric field vertical to ribbon plane explore...

Journal: :EPL 2023

Abstract We show quantum systems with disordered Hamiltonians may exhibit order in commonly measured quantities. This counter-intuitive situation is demonstrated using a conventional tight binding model for two-dimensional nanoribbons various boundary conditions. The analysis uses the traditional non-equilibrium Green's function (NEGF) methodology electron transport. study dragon nanodevices th...

2013
Kartik Ganapathi Ali Javey Chenming Hu Junqiao Wu

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2007
A. Bulusu D. G. Walker

Several new reduced-scale structures have been proposed to improve thermoelectric properties of materials. In particular, superlattice thin films and wires should decrease the thermal conductivity, due to increased phonon boundary scattering, while increasing the local electron density of states for improved thermopower. The net effect should be increased ZT, the performance metric for thermoel...

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