Multi-gate modulation doped In0.7Ga0.3As quantum well FETs (MuQFETs) are simulated, fabricated and analyzed in detail. The devices operate in both classical and non-classical quantum regime. Due to its robust electrostatics, its excellent channel transport properties and its versatile classical and quantum mode operation capability, In0.7Ga0.3As MuQFET is promising device architecture for futur...

At temperatures comparable to the Fermi temperature, we have measured a plasmon enhanced Coulomb drag in a GaAsyAlGaAs double quantum well electron system. This measurement provides a probe of the many-body corrections to the coupled plasmon modes, and we present a detailed comparison between experiment and theory testing the validity of local field theories. Using a perpendicular magnetic fiel...

The routing capability is a requisite in quantum network. Although the quantum routing of signals has been investigated in various systems both in theory and experiment, the general form of quantum routing with many output terminals still needs to be explored. Here we propose a scheme to achieve the multi-channel quantum routing of the single photons in a waveguide-emitter system. The channels ...

In this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (MQW) chirped distributed feedback semiconductor optical amplifier (DFB-SOA)  all-optical flip-flop is precisely derived. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the ...

Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn((1-x))Mg(x)O core-shell quantum well heterostructures grown by metal organic vapor phase epitaxy. Varying the barrier Mg concentration from x = 0.15 to 0.3 leads to the formation of misf...