Bottom-gate thin film transistors with amorphous zinc tin oxide channels were grown by atomic layer deposition. The films maintained their amorphous character up to temperatures over 500 C. The highest field effect mobility was 13 cm/V s with on-to-off ratios of drain current 10–10. The lowest subthreshold swing of 0.27 V/decade was observed with thermal oxide as a gate insulator. The channel l...

We studied the response of high-resistivity MOS CCDs to monochromatic X-ray illumination at energies ranging from 1.47 to 5.9 keV and discovered a new feature in the low-energy tail of the response function. We attribute it to the photons interacting in the gate insulator and explain the shape of the entire low-energy tail assuming that it is formed by electron charge clouds partially formed in...

The study of organic field effect transistors has expanded from its original objectives in developing organic semiconductors in which charge carriers have high mobility to focusing increasingly on opportunities arising from the design of electronic interfaces. Interfaces can have an important functional role in devices, for example a reconfigurable interface which responds reversibly to externa...

We report the fabrication of transparent and flexible transistors where both the bottom gate and the conducting channel are carbon nanotube networks of different densities and Parylene N is the gate insulator. Device mobilities of 1 cm(2) V(-1) s(-1) and on/off ratios of 100 are obtained, with the latter influenced by the properties of the insulating layer. Repetitive bending has minor influenc...

Articles you may be interested in Observation of gate bias dependent interface coupling in thin silicon-on-insulator metal-oxide-semiconductor field-effect transistors Mobility comparison between front and back channels in ultrathin silicon-on-insulator metal-oxide-semiconductor field-effect transistors by the front-gate split capacitance-voltage method Appl. Trap evaluations of metal/oxide/sil...

The High-K Metal Gate (HKMG) technology has become the keystone to reduce gate leakage and enable the continuous scaling of transistors towards 32nm node and beyond. However, the reduction of gate leakage in 32nm HKMG PD (Partially Depleted)-SOI (Silicon-On-Insulator) CMOS (Complementary Metal–Oxide–Semiconductor) inevitably changes the modeling methods for gate current, floating body effect, a...

The effects of gate dielectrics material in organic thin film transistors (OTFTs) were investigated. The gate dielectrics were deposited by plasma enhanced chemical vapor deposition (PECVD) with cyclohexane and tetraethylorthosilane (TEOS) respectively used as organic and inorganic precursors. The gate dielectrics (gate insulators) were deposited as either organic plasma-polymer or organic–inor...

Coherent tunneling processes of multiple Cooper pairs across a Josephson junction give rise to higher harmonics in the current phase relation. In this work, we propose and study junctions based on semiconductor-superconductor-ferromagnetic insulator heterostructures engineer nonsinusoidal current-phase relations. The gate-tunability charge carriers density semiconductor, together with adjustabl...

This report presents the first characterization of a correlated oxide SmNiO3 (SNO) used in electronic device structures. In a MOS capacitor with a gate insulator of a SNO film sandwiched between two SiO2 layers, memory effects are observed. The response time of polarization is over a microsecond. This implies that space charge polarization is dominant. Due to the instability of Ni3+ valence sta...