A study of the liquid alloys of the simple eutectic systems Au-Si and AuCre at selected compositions has demonstrated a pattern of behaviour very similar to that seen in the related gold-based system Au-Sn. The sharp x ray diffraction profile of Au-Ge liquid alloys at the gold-rich end demonstrates that the structure, like that of pure Au. is simple, close-packed but with a mean closest distanc...

Ab initio calculations have been carried out to investigate the H-atom migration and H2 desorption on the mixed SiGe(100)-2×1 surface using the Si9-xGexH13, Si14GeH19 and Si13Ge2H19 cluster models. The H2 recombinative desorption is the rate-determining step in hydrogen migration and desorption on SiGe(100) surface since the energy barrier of H-atom migration is generally lower than that of H2 ...

The notion of a belligerent GE-filter in GE-algebra is introduced, and the relationships between will be given. Conditions for to are provided. product union GE-algebras discussed its properties investigated.

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more...

A detailed Raman characterization of the structural properties of as-grown and annealed self-assembled Si/Ge dot multilayers is reported in this paper. Several new modes in as-grown or annealed Si/Ge dots and a frequency splitting of 4.2 cm between the longitudinal ~LO! and transversal optical ~TO! Ge-Ge modes in as-grown Si/Ge dots are observed in Raman spectra. An average Ge content of 0.8 an...

The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks spin degeneracy of surface or interface states. Hence, when an electric current runs through a interface, this effect generates effective magnetic field acting on electron spin. This provides additional tool manipulate state in materials such as Si Ge that, their bulk f...

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire tr...