Today’s wireless system requirements demand increasing performance from power amplifiers. The higher gain and output power available from today’s transistors reduce the number of amplifier stages, and improved efficiency decreases system DC power requirements and generated heat. But at these higher power and efficiency levels, power amplifier linearity needs to meet or exceed the requirements o...

*Corresponding author email: [email protected] Abstract In the present work we report the characterization of coplanar waveguides (CPWs) implemented on AlGaN/GaN HEMT layers deposited on high-resistivity silicon (HR-Si) substrates, up to frequencies as high as 110 GHz. The topic is of interest because it is fairly widely held in the community that substrate losses could hinder the application of...

AlGaN/GaN high-electron-mobility transistors (HEMT) have been grown by radio frequency molecular beam epitaxy (RF-MBE) on 3” Si substrates. A record low contact resistance Rc ~ 0.11 .mm has been achieved for GaN HEMTs on Si by using non alloyed ohmic contacts regrown by MBE. Owing to the low contact resistance a 75-nm gate length unpassivated HEMT shows intrinsic current gain cut-off frequency ...

This paper is devoted to examining the ability of artificial neural networks to model the forward transmission coefficient, which represents an important figure of merit for microwave transistors. This analysis is carried out for two different on-wafer devices, namely GaAs HEMT and Si FinFET. As far as the HEMT technology is concerned, the model is developed for three devices which differ in ga...

In this paper, leakage current signatures in AlGaN HEMT are studied after storage at 300°C. By comparing gate pad topology and by localized FIB cuts, Optical Beam Induce Resistance Change (OBIRCh) analysis was used to localize current path. Results tend to indicate that mechanical stresses in the gate structure strongly influences the leakage current of the transistor. Electrical characterizati...

Gallium nitride high electron mobility transistors (GaN HEMTs) were developed for millimeter-wave high power amplifier applications. The device with a gate length of 80 nm and an InAlN barrier layer exhibited high drain current of more than 1.2 A/mm and high breakdown voltage of 73V. A cut-off frequency fT of 113GHz and maximum oscillation frequency fmax of 230GHz were achieved. The output powe...

In this paper, a large signal equivalent circuit empirical model based on Anglov model for ceramic package high power AlGaN/GaN HEMT has been proposed. A temperature-dependent drain current model, including self-heating effect, has been presented, and good agreements are achieved between measurement results and calculated results at different temperatures. The nonlinear capacitance models are m...

An InAlAs/InGaAs HEMT with an InAs-rich barrier spacer (In0.52Al0.48As) to reduce the parasitic resistance is reported. Devices were obtained with a source resistance of 170 V-mm. A 40 nm gate length In0.7Ga0.3As HEMT with Lside 1⁄4 100 nm and tins 1⁄4 10 nm shows excellent transconductance and subthreshold characteristics including gm 1⁄4 1.6 mS/mm, DIBL 1⁄4 122 mV/V and S 1⁄4 80 mV/ dec at VD...

Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...

Described are the design procedure and measured performance of a PA targeted for the W-CDMA downlink band exhibiting over 84% PAE at 2.14 GHz. The PA is designed with an uncharacterised GaN HEMT. A measurement-based design approach is used to optimise the source and load impedance at the fundamental frequency with classF harmonic terminations enforced. S-parameters extracted from a full-wave EM...