AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements were carried out to study the Mg memory effect and redistribution in the emitter–base junction. The results indicated that there is a Mg-rich film formed in the ongrowing layer after the Cp2Mg source is switched off. The Mg-rich film can be confined in...

This paper presents a six-bit current-steering digital-to-analogue converter (DAC), which optimises the spurious free dynamic range (SFDR) performance of high-speed binary weighted architectures by lowering current switch distortion and reducing the clock feedthrough effect. A novel current source cell is implemented that comprises heterojunction bipolar transistor current switches, negative-ch...

The performance capabilities of Pnp InGaAsN-based heterojunction bipolar transistors (HBT) for use in complementary HBT technology have been theoretically addressed with a twodimensional simulation program based on the drift-diffusion model. Simulation results closely reproduce the DC characteristics experimentally observed from the first demonstrated Pnp AIGaAsAnGaAsN HBT with a current gain o...

We present, in this paper the mathematical approach for optimization nanometric thickness of the SiGeC base heterojunction bipolar transistors (HBTs), realized in BiCMOS industrial process. However, use of these components in applications microwave radio frequencies implores the use of complex structures shrinking. The base SiGeC is the active part of the transistor, the optimization of the nan...

We have characterized base-layer width and dopant distributions on cleaved cross-sections of AlxGa12xAs/GaAs heterojunction bipolar transistor ~HBT! structures using a variation of electrostatic force microscopy. The contrast observed is sensitive to the local dopant concentration through variations in the depletion layer depth extending into the sample surface, and enables delineation of indiv...

This paper presents two highly integrated receiver circuits fabricated in InP heterojunction bipolar transistor (HBT) technology operating at up to 2.5 and 7.5 Gb/s, respectively. The first IC is a generic digital receiver circuit with CMOS-compatible outputs. It integrates monolithically an automatic-gain-control amplifier, a digital clock and data recovery circuit, and a 1 : 8 demultiplexer, ...

High volume HBT (Heterojunction Bipolar Transistor) production benefits from non-destructive measurement techniques to verify the quality of every product wafer. X-ray diffraction is non-destructive and sensitive to layer thicknesses and compositions. The thin layers typical of HBT designs yield weak diffraction intensity, which are overwhelmed by the signal from the substrate in the convention...

Among the many benefits InGaP brought to the GaAs-based heterojunction bipolar transistor (HBT) over the last few years, nothing is more profound than the drastic improvement it provided in the long-term reliability. Today, it is relatively common to obtain activation energies higher than 1.5eV with InGaP HBTs operating under bias and temperature conditions suitable for modern telecommunication...

Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

This work presents an active balanced sub-harmonic mixer (SHM) using InP double heterojunction bipolar transistor technology (DHBT) for Q-band applications. A miniature spiral type Marchand balun with five added capacitances for improved control of amplitude and phase balance is integrated with the SHM. The measured results for the SHM demonstrates a conversion gain of 1.2 dB at an RF frequency...