نتایج جستجو برای: hole recombination
تعداد نتایج: 107742 فیلتر نتایج به سال:
Radiative recombination in degenerately ndoped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laserinduced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to hig...
Radiative recombination in degenerately n-doped InP nanowires is studied for excitation above and below the Fermi energy of the electron gas, using photoluminescence. Laser-induced electron heating is observed, which allows absorption below the Fermi energy. We observe photon upconversion where photo-excited holes recombine with high |k| electrons. This can be attributed to hole scattering to h...
The paper sets up the theory model that includes in the exchange of matter and energy between the heat background gas and the condensate on the base of Bose-Einstein Condensate(BEC) at the premise of induced gravity-like. We introduce the coefficient of loss ratio of three body recombination collision. The conclusion indicates that the model accords with the real situation of the Schwartzchild ...
We fabricated Ag nanoparticle (NP) film in organic light emission diodes (OLEDs), and a 23 times increase in electroluminescence (EL) at 518 nm was probed by time-resolved EL measurement. The luminance and relative external quantum efficiency (REQE) were increased by 5.4 and 3.7 times, respectively. There comes a new energy transport way that localized surface plasmons (LSPs) would absorb energ...
Back-contact perovskite solar cells offer a significant potential to reach high efficiency due reduced parasitic absorption from the top surface. However, currently reported efficiencies are considerably lower (<10%) than planar (>20%). Herein, back-contact fabricated study loss mechanisms that cause low device efficiency. This work spatially resolves short-circuit current, open-circuit voltage...
Operation of semiconductor lasers in the 20--50 $\mu$m wavelength range is hindered by strong non-radiative recombination interband laser diodes, and lattice absorption GaAs-based quantum cascade structures. Here, we propose an electrically pumped diode based on multiple HgTe wells with band structure engineered for Auger suppression. Using a comprehensive model accounting carrier drift diffusi...
Reflection, photoand cathodoluminescence of 12CaO 7Al2O3 (C12A7) were investigated. Smooth features observed in VUV reflection spectrum of monocrystalline C12A7 evidence its complicated crystalline structure and lattice disorder. Two luminescence bands peaking at 4.9 and 3.35 eV were revealed in C12A7 ceramics having encaged electrons and O ions. The 4.9 eV emission has an excitation onset at 6...
In this work, we have systematically studied the role of point defects in recombination time monolayer MoS$_2$ using time-dependent ab initio non-adiabatic molecular dynamics simulations. Various types defects, such as S vacancy, interstitial, Mo vacancy and interstitial been considered. We show that strongly accelerate electron-hole recombination, especially atoms do by 3 orders magnitude high...
Management of light is a crucial task in solar cell design and structure because it increases the path length inside, which turn probability electron-hole pair generation. This study addresses impact pyramidal textured on spectral transmission morphology silicon. The silicon wafers was investigated using PC3S software to transmission, reflectance, collection probability, mobility, carriers, ele...
We investigate the origins of lasing emission in a scatterer-resonance-controlled random laser made of ZnO nanopowder over a wide temperature range (20–300K). At higher temperatures ( 150 > K), the lasing emission appears around exciton recombination energies and the lasing threshold carrier density is comparable to the Mott density, indicating that the resonance-controlled random laser is goin...
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