A series of (±)- and (R,R)-tridentate diamino, ortho/para disubstituted phenolate proligands H(NNO(R)) with various phenolate substituents was synthesized and used to prepare indium dichloride complexes (NNO(R))InCl2via salt metathesis of the deprotonated ligands with indium trichloride. These complexes are dinuclear in the solid state, in contrast to previously reported complexes with t-butyl ...

In our continuous wave cavity ring-down spectroscopy (CW-CRDS) experiments, we have often observed that the decay time constant drops to a lower value at some cavity lengths or some intercavity pressures. The resulting instabilities lead to a reduction in the sensitivity of our CRDS system. We have deduced that the cause of this noise is the coupling between the TEM(00) mode that the laser exci...

Graphene exhibits remarkable properties for various novel applications. One of many appealing applications of graphene would be to fabricate transparent conductive films to replace indium tinoxide (ITO).Theuseof graphene is promisingdue to its high optical transmittance, low resistance, high chemical stability, and high mechanical strength. This, as well as other applications, requires a large ...

The kinetics of hepatic uptake and degradation of sphingomyelin/cholesterol (2:1, M/M) small unilamellar liposomes were investigated in a BALB/c mouse. The tissue distribution of liposomes was determined by scintillation spectrometry. The percentage of intact liposomes in tissues was estimated by the technique of gamma-ray perturbed angular correlation. A kinetic model was developed to analyze ...

Indium(III) sulfide has recently attracted much attention due to its potential in optical sensors as a photoconducting material and in photovoltaic applications as a wide band gap material. On the other hand, optical absorption properties are key parameters in developing photosensitive photodetectors and efficient solar cells. In this work, we show that indium sulfide nanorod arrays produced by...

We report novel indium gallium arsenide (InGaAs) nanopillar lasers that are monolithically grown on (100)-silicon-based functional metal-oxide-semiconductor field effect transistors (MOSFETs) at low temperature (410 °C). The MOSFETs maintain their performance after the nanopillar growth, providing a direct demonstration of complementary metal-oxide-semiconudctor (CMOS) compatibility. Room-tempe...

Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create t...

Large-scale photonic integrated circuits (PICs) in Indium Phosphide represent a significant technology innovation that simplifies optical system design, reduces space and power consumption, and improves reliability. In addition, by lowering the cost of optical-to-electrical-to-optical (OEO) conversion in optical networks, they provide a transformational opportunity to embrace the use of electro...

Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the pres...

Indium antimonide (InSb), a narrow band gap III-V semiconductor is a promising infrared-active material for various optoelectronic applications. Synthetic challenge of colloidal InSb nanocrystals (NCs) lies in the limited choice of precursors. Only a few successful synthetic schemes involving highly toxic stibine (SbH3) or air- and moisture-sensitive metal silylamides (In[N(Si-(Me)3)2]3 or Sb[N...