The long-term (6 months) oxidization of hcp-InN (wurtzite, InN-w) nanostructures (crystalline/amorphous) synthesized on Si [100] substrates is analyzed. The densely packed layers of InN-w nanostructures (5-40 nm) are shown to be oxidized by atmospheric oxygen via the formation of an intermediate amorphous In-Ox-Ny (indium oxynitride) phase to a final bi-phase hcp-InN/bcc-In2O3 nanotexture. High...

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In2O3 c...

A novel organic electro-optic (EO) modulator using transparent conducting oxides (ZnO and In2O3) as electrodes is demonstrated for the first time. The modulator employs the poled guest-host chromophore/polymer material AJL8/APC having r33=35pm/V and is able to achieve a low Vpi=2.8 V switching voltage for an 8mm-long device at a wavelength of 1.31ìm. This corresponds to a Vpi=1.1 V switching vo...

With increasingly serious environmental problems caused by the improvement in people’s living standards, number of cars has increased sharply recent years, which directly leads to continuous increase concentration NO2 air. is a common toxic and irritant gas, harmful both human body environment. Therefore, this research focuses on detection committed developing high-performance, low limit sensor...

In the work, sedimentation-stable sols of indium (III) and tin (IV) hydroxides were obtained by Anion Resin Exchange Precipitation, which consists exchange reaction between OH ions anion resin anions metal-containing solutions. The synthesized hydrosols used to obtain conducting films In2O3 oxide doped with Tin In2O3: Sn, a surface resistance 4 kOhm/sq, thicknesses 200–500 nm transparency more ...

When the fluorescence of a material under transparent conductive films is measured, it sometimes required that have low intensity to prevent stray light. In this study, oxygen partial pressure during sputtering was varied and transmittance, resistivity, were measured clarify cause indium tin oxide (ITO) In2O3. The both ITO In2O3 decreased with an increase in case as-deposited films. considered ...

3d transition impurities in wide-gap oxides may function as donor/acceptor defects to modify carrier concentrations, and as magnetic elements to induce collective magnetism. Previous first-principles calculations have been crippled by the LDA error, where the occupation of the 3d-induced levels is incorrect due to spurious charge spilling into the misrepresented host conduction band, and have o...

A comparison of the transport properties of populations of single-crystal, In2O3 nanowires (NWs) grown by unassisted hot-wall chemical vapour deposition (CVD) versus NWs grown by laser-ablation-assisted chemical vapour deposition (LA-CVD) is presented. For nominally identical growth conditions across the two systems, NWs fabricated at 850 ◦C with laser-ablation had significantly higher average ...