Acknowledgements The results presented in this thesis were obtained during my employment as a scientific coworker at the The colleagues at EELE for the good working atmosphere. The students who supported me with their projects.

A micro-sectioning approach for characterizing the quality or degradation state of interconnect interfaces in electronic components is described. The method is presented as a means of investigating the bonding quality of the Al wedge bonding process in IGBT modules. Micro-sectioning approach for quality and reliability assessment of wire bonding interfaces in IGBT modules Kristian Bonderup Pede...

The switching characteristics (turn-on and turn-off) and forward conduction drop of trench-gate IGBTs are examined over a temperature range of -260 to 25 °C. A physics-based model previously developed is modified to incorporate appropriate physical behavior at low junction temperatures. Results from the model are compared to experimental waveforms and discrepancies are discussed. 1

In this paper, we propose and validate a Heterogate DielectricDual Material Gate-Gate All Around, Tunnel Field Effect Transistor (HD-DMG-GAA-TFET). A comparative study for different values of high-k has been done, and it has been clearly shown that the problem of lower ION (which hinders the circuit performance of TFET) can be overcome by using the dielectric engineered hetero-gate architecture...

We report a nanofluidic transistor based on a metal-oxide-solution (MOSol) system that is similar to a metal-oxide-semiconductor field-effect transistor (MOSFET). Using a combination of fluorescence and electrical measurements, we demonstrate that gate voltage modulates the concentration of ions and molecules in the channel and controls the ionic conductance. Our results illustrate the efficacy...

In this paper, we introduce the new generation 3300V HiPak2 IGBT module (130x190)mm employing the recently developed TSPT+ IGBT with Enhanced Trench MOS technology and Field Charge Extraction (FCE) diode. The new chip-set enables IGBT modules with improved electrical performance in terms of low losses, good controllability, high robustness and soft diode recovery. Due to the lower losses and th...

The behaviour in terms of robustness during turn-off of power IGBT modules is presented. The experimental characterisation is aimed to identify the main limits during turn-off in power IGBT modules in typical hard switching applications. In this paper an experimental characterization of high power IGBT modules at output currents beyond RBSOA, at high junction temperatures and under different dr...