Recent research in the area of Second Language Acquisition has proposed that bilinguals and L2 learners show syntactic indeterminacy when syntactic properties interface with other cognitive domains. Most of the research in this area has focused on the pragmatic use of syntactic properties while the investigation of compliance with a grammatical rule at syntax-related interfaces has not received...

| A CMOS interface circuit to transfer a digital signal between two circuits of di erent supply voltages is described. The interface can be used, for example, between 3 volt and 5 volt or higher voltage families. The principal characteristics of the interface circuit are: no static power dissipation, high speed, and high speed bu ering [1].

An adaphve user interface M supposed to adapt itself to the characteristics of an individual user. It is widely accepted that such an adaptation requires the interface to mamtain a user model embedded in the system However, there are many unresolved problems with respeet to collecting reformation about the user and applying it in order to adapt the interface successfully.

References 1. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research Letters 2013, 9:152. 2. Prakash A, Maikap S, Chiu HC, Tien TC, Lai CS: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/ TaOx interface. Nanoscale Research L...

Silicon nanowires (Si NW) are ideal candidates for low-cost solution processed field effect transistors (FETs) due to the ability of nanowires to be dispersed in solvents, and demonstrated high charge carrier mobility. The interface between the nanowire and the dielectric plays a crucial role in the FET characteristics, and can be responsible for unwanted effects such as current hysteresis duri...

The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is inv...