The features of InAs quantum dots obtained on GaAs(001) single-crystal substrates by ion-beam sputtering were investigated. It has been shown that in the range of ion energies of 150 to 200 eV at a temperature of 500 °C and a beam current of 120 µA InAs quantum dots with average dimensions below 15 nm and a surface density of 1011 cm-2 are formed. The technique of controlled doping of InAs/GaAs...

Titanium nitride thin films were grown on 304 stainless steel substrates at various nitrogen/argon flow ratios by ion beam sputtering (IBS) technique. The current research is a follow up study on the influence of gas ratio on structural and corrosion properties in the TiN coated 304 stainless steel. Film structural identification of phases was performed using X-ray diffractometry (XRD). Sca...

The classical theory of ion beam sputtering predicts the instability of a flat surface to uniform ion irradiation at any incidence angle. We relax the assumption of the classical theory that the average surface erosion rate is determined by a Gaussian response function representing the effect of the collision cascade and consider the surface dynamics for other physically-motivated response func...