In this paper, the impact of RDF on the static noise margin (SNM) and read current margin (SINM) of a prototype 22nm 6T SRAM was investigated using TCAD modeling. Individual device statistics of threshold voltages (Vt) and transport related parameters were first extracted for NFETs and PFETs. SNM and SINM characteristics of the corresponding SRAM cells were then analyzed. Two methods to emulate...
