Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce leakage current 4H-SiC based high-power devices is a long-standing issue in development homoepitaxy. In this work, we compare effect different type dislocations, and discriminate dislocation lines dislocation-related pits on by combining molten-KOH etching tunneling atomic force microscopy (TUNA) measurements. It fo...

The threshold current and the characteristic temperature of 1.3m InGaAsP–InP buried heterostructure (BH) lasers with the p-n-p-n blocking layers have been numerically analyzed using a two-dimensional (2-D) device simulator. The simulation model includes optical gain, intervalence absorption, radiative spontaneous-emission current, Auger recombination current, Shockley–Read–Hall recombination cu...

When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...