نتایج جستجو برای: magnetron sputtering

تعداد نتایج: 8959  

Journal: :journal of advanced materials and processing 0
mehdi manouchehrian south tehran branch, islamic azad university, tehran, iran

tan films with different n2 partial pressure were deposited on 304 stainless steel using the magnetron sputtering method. the effect of gas pressure on the mechanical property, morphology and phase structure of the films is investigated by x-ray diffraction (xrd), atomic force microscopy (afm), microhardness testing, friction coefficient measurements, and wear mechanism study. the xrd results c...

2001
VACUUM CHAMBERS P. He H. C. Hseuh M. Mapes R. Todd

The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ~100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DCmagnetron sputte...

1999
Young-Seok Kim Sung-Chul Shin

Room-temperature perpendicular magnetic anisotropy ~PMA! was observed in Ni/Pt multilayer films having 7–30 Å Ni and constant 3 Å Pt sublayer thickness, prepared by magnetron sputtering at an Ar sputtering pressure of 7 mTorr. To understand the origin of PMA, the magnetoelastic anisotropy was determined from delicate in situ stress and ex situ magnetostriction coefficient measurements. Tensile ...

2008
Sudhir Chandra Vivekanand Bhatt Ravindra Singh Preeti Sharma Prem Pal

In the present work, the deposition and characterization of dielectric, piezoelectric, semiconductor and conductor films by RF diode / RF magnetron sputtering process for applications in MEMS fabrication have been reported. Thin films of silicon dioxide, silicon nitride, amorphous silicon, zinc oxide and lanthanum doped lead zirconate titanate (PLZT) were prepared by RF sputtering process and e...

2016
Bin Peng Dongdong Gong Wanli Zhang Jianying Jiang Lin Shu Yahui Zhang

AlN thin films were deposited on flexible Hastelloy tapes and Si (100) substrate by middle-frequency magnetron sputtering. A layer of Y₂O₃ films was used as a buffer layer for the Hastelloy tapes. A two-step deposition technique was used to prepare the AlN films. The effects of deposition parameters such as sputtering power, N₂/Ar flow rate and sputtering pressure on the microstructure of the A...

2003
A. Boyd M. Akay B. J. Meenan

This paper reports a detailed study of how repeated r.f. magnetron sputtering from a hydroxyapatite (HA) powder target affects the nature and reproducibility of a sequential series of thin-film coatings deposited onto Ti6Al4V substrates. An evaluation of the effective lifespan of the HA sputter targets and the reproducibility of the calcium phosphate (CaP) coatings produced from them has been m...

2016
Susann Schmidt Carina Höglund Jens Jensen Lars Hultman Jens Birch Richard Hall-Wilton

access at Springerlink.com ABSTRACT B4C coatings for B-based neutron detector applications were deposited using high-power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) processes. The coatings were deposited on Si(001) as well as on flat and macrostructured (grooved) Al blades in an industrial coating unit using B4C compound targets in Ar. The HiPIMS and D...

2001
Ning Li J. P. Allain D. N. Ruzic

Reactive sputtering of aluminum oxide in a planar magnetron system is conducted with a mixture of O and Ar reacting with 2 and bombarding an aluminum target. The aluminum target is powered by a pulsed directed current (DC) bias which functions to discharge the accumulated ions on the insulating AlO film surface during the positive duty cycle and suppresses arc formation. x A seven-turn helical ...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید