Quasi-optical (QO) active circuits have originally received interest for power generation by large-scale power combining of solid-state devices at microwave and millimeter-wave frequencies. Here, we present an overview of QO components developed with functionality in mind, with an emphasis on bidirectional amplifier arrays for transmit/receive (T/R) front ends. We discuss possible advantages of...

An ultra low power consuming low noise amplifier (LNA) at C-band with variable gain for adaptive antenna combining is presented in this paper. The microwave monolithic integrated circuit (MMIC) was fabricated using commercial 0.25 μm bipolar complementary metal oxide semiconductor (BiCMOS) technology. At 5.2 GHz, a supply voltage of 1.2 V and a current consumption of only 1 mA, a maximum gain o...

CIV: N/A TSR: Yes, except N/A for MT, and ‘‘technology’’ for the ‘‘development’’ or ‘‘production’’ of: (a) Traveling Wave Tube Amplifiers described in 3A001.b.8, having operating frequencies exceeding 19 GHz; (b) solar cells, coverglass-interconnect-cells or covered-interconnect-cells (CIC) ‘‘assemblies,’’ solar arrays and/or solar panels described in 3A001.e.4; (c) Microwave ‘‘Monolithic Integ...

With the ever-increasing demand on wireless spectrum by wide bandwidth applications, such as 3G mobile phones at RF frequencies, Multipoint Video Distribution System (MVDS) and Local Multipoint Distribution System (LMDS) in the millimeter-wave frequency range, there is a growing need to exploit higher and higher frequencies. So, mmwave field is becoming a rapidly emerging area of research. Keyw...

In this work, the approach of the distributed transversal filter for Optical CDMA systems is addressed. It demonstrates that pulse generation and correlation functions can be accomplished in the electrical domain for multi-Gbit/s systems. The practicalities of the approach were assessed using a state of the art GaAs MMIC process. A innovate transversal filter, which is termed the dual drain-lin...

An exciting program on monolithic microwave integrated circuit (MMIC) technology was pursued on from nearly 1983 to 1991, including its design and fabrication equipments, mainly in USA and Europe. In the era, “MMIC” was a very new concept which meant integration of microwave and millimeter-wave circuits on a die. By incorporating the CAD and measurement tools developed in the program, Japanese ...

Novel monolithic-microwave integrated-circuit source-impedance tuners for use in on-wafer noise-parameter measurement systems are reported, which can be incorporated into a wafer probe tip. These eliminate the effect of cable and probe losses on the magnitude of a reflection coefficient that can be presented to the input of an on-wafer test device, thus enabling higher magnitudes to be synthesi...

An efficient metal-insulator-metal (MIM) capacitor simple scalable model for use in monolithic-microwave integrated circuit (MMIC) design is presented in this paper. This model is based on transmission-line theory. Analytical expressions based on physical parameters have been given in detail. Nine different physical dimension capacitors are fabricated to verify the validity of the proposed mode...

In this paper a demonstrator oscillator circuit integrated in a MCM-D on glass technology is presented. The active device of the oscillator is a thin-film Ge (germanium) -based MHEMT. The MHEMT is embedded in the bottom dielectric layer of the MCM-D. The combination of passive MCM-D technology and MHEMTs on Ge allows for efficient semi-monolithic integration of active devices and realisation of...

Abstract: Class-F microwave monolithic integrated circuit (MMIC) power amplifiers (PA) fabricated in a GaN technology are reported. Field-plated GaN HEMT devices are used for highpower performance. Two MMICs are reported. The first class-F MMIC PA operating at 2.0GHz achieved a power-added efficiency (PAE) of 50% with 38dBm output power and 6.2W/mm power density. A second class-F PA operating a...