نتایج جستجو برای: nanoscale schottky

تعداد نتایج: 27775  

Journal: :Nanotechnology 2015
D Tomer S Rajput L J Hudy C H Li L Li

Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by curre...

2004
Jane Gilman Peter Waterman

Our main result is a description of the boundary of the parameter space of classical Schottky groups affording two parabolic generators within the larger parameter space of all Schottky groups with two parabolic generators. This boundary is surprisingly different from that of the larger space. It is analytic while the boundary of the larger space is fractal. Approaching the boundary of the smal...

Journal: :IEICE Electronic Express 2009
Naoteru Shigekawa Suehiro Sugitani

The impact of forces due to the difference in mechanical stresses between the Schottky contacts and passivation films on the electrical properties of (0001) AlGaN/GaN Schottky diodes is numerically analyzed in the framework of the edge force model. The compressive (tensile) passivation films induce negative (positive) piezoelectric charges below the Schottky contacts in the GaN channels and bri...

2012
Karel Zdansky

Large attention has been devoted worldwide to the investigation of hydrogen sensors based on various Schottky diodes. We prepared graphite semimetal Schottky contacts on polished n-InP and n-GaN wafers partly covered with nanoparticles of catalytic metals Pd or Pt by applying colloidal graphite. Metal nanoparticles were deposited electrophoretically from colloids prepared beforehand. Deposited ...

بقائی نژاد, مجید, حاجی بدلی, عسگر, فرزی, غلامعلی,

In this research, Schottky diode with Al-PANI/MWCNT-Au structure was fabricated using spin coating of composite polymer and physical vapor deposition of metals. For this purpose, a thin layer of gold was coated on glass and then composite of polyaniline/multi-walled carbon nanotube was synthesized and spin-coated on gold layer. Finally, a thin layer of aluminum was coated on polymer layer. The ...

2011
Tero Kiuru Antti Räisänen Tapani Närhi

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Tero Kiuru Name of the doctoral dissertation Characterization, modeling, and design for applications of waveguide impedance tuners and Schottky diodes at millimeter wavelengths Publisher School of Electrical Engineering Unit Department of Radio Science and Engineering Series Aalto University publication series DOCTORAL DISSERT...

2001
Benson Farb Lee Mosher

We develop a theory of convex cocompact subgroups of the mapping class group MCG of a closed, oriented surface S of genus at least 2, in terms of the action on Teichmüller space. Given a subgroup G of MCG de ning an extension 1 ! 1(S) ! ΓG ! G ! 1, we prove that if ΓG is a word hyperbolic group then G is a convex cocompact subgroup of MCG. When G is free and convex cocompact, called a Schottky ...

Journal: :Biomedical microdevices 2010
Woo-Jin Chang Ho-Jun Suk A K M Newaz Kirk D Wallace Samuel A Wickline Stuart A Solin Rashid Bashir

We report the electric field and pH sensitivity of fluid gated metal-semiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on n-type GaAs. Compared to standard field-effect sensors, the MSH Schottky structures are 21 times more sensitive to electric field of -46.6 V/cm and show about six times larger resistance change as pH of the solution is decreased from 8.17 to 5.54....

2015
Norfarariyanti Parimon Rosalyn R. Porle Mazlina Mamat

Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conventional steps used in standard GaAs processing. The ohmic and Schottky contacts of Schottky diodes...

2004
YING ZHANG

In [15], Greg McShane demonstrated a remarkable identity for the lengths of simple closed geodesics on cusped hyperbolic surfaces. This was generalized by the authors in [19] to hyperbolic cone-surfaces, possibly with cusps and/or geodesic boundary. In this paper, we generalize the identity further to the case of classical Schottky groups. As a consequence, we obtain some surprising new identit...

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