In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENATM process simulator and the device simulation is performed using ATLASTM from SILVACO i...

We propose a hybrid plasmonic device consisting of a planar dielectric waveguide covering a gold nanostripe array fabricated on a gold film and investigate its guiding properties at telecom wavelengths. The fundamental modes of a hybrid device and their dependence on the key geometric parameters are studied. A communication length of 250 μm was achieved for both the TM and TE guided modes at te...

An integrating sphere charge coupled device ~CCD!-based measurement system has been developed to accurately characterize the optoelectronic performance of organic polymer light-emitting devices ~PLEDs!. By theoretically analyzing a previously developed lens-coupled method and comparing it with the integrating sphere CCD-based method, we have found that the integrating sphere-based measurement m...

In the paper, a new physical principle for designing of a new optoelectronic device and its theoretical description are presented. The basic idea of the device consists in providing inside a multilayered semiconductor structure such conditions for photoelectrons that enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around p-n junctions of a re...