Titanium oxide (TiO2) films and TiO2/SiNx stacks have potential in surface passivation, anti-reflection coatings and carrier-selective contact layers for crystalline Si solar cells. A Si wafer, deposited with 8-nm-thick TiO2 film by atomic layer deposition, has a surface recombination velocity as low as 14.93 cm/s at the injection level of 1.0 × 1015 cm−3. However, the performance of silicon su...

The impact of forces due to the difference in mechanical stresses between the Schottky contacts and passivation films on the electrical properties of (0001) AlGaN/GaN Schottky diodes is numerically analyzed in the framework of the edge force model. The compressive (tensile) passivation films induce negative (positive) piezoelectric charges below the Schottky contacts in the GaN channels and bri...

Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt sh...

The corrosion resistance of type 304L and 316 austenitic stainless steels in 2M H2SO4 at 0-1.5%NaCl concentrations was studied through potentiodynamic polarization technique and optical microscopy analysis. The corrosion rate, pitting potential, passivation potential and surface morphology of both steel where significantly altered by the Clion concentration, alloy composition and metallurgical ...

The single-molecule fluorescence technique is becoming a general and mature tool to probe interactions and dynamics of biomolecules with ultra high precision and accuracy. However, nonspecific adsorption of biomolecules to the flow cells remains a major experimental riddle for the study of many complex biological systems, especially those exhibiting low binding affinity and presenting with weak...

CdSe quantum dots (QDs) doped glasses have been widely investigated for optical filters, LED color converter and other optical emitters. Unlike CdSe QDs in solution, it is difficult to passivate the surface defects of CdSe QDs in glass matrix, which strongly suppress its intrinsic emission. In this study, surface passivation of CdSe quantum dots (QDs) by Cd1-xZnxSe shell in silicate glass was r...

While Al2O3 has been proven to provide an excellent level of surface passivation on all sorts of p-type doped silicon surfaces, the passivation mechanism of this layer and especially the influence of the post-deposition anneal on the Al2O3/Si interface properties is not yet completely understood. A great increase in the surface passivation is observed after a post-deposition anneal, i.e. a post...

Germanium is well-known for its good electronic properties, but also for the poor passivationquality of its natural or thermally-grown oxide layer. The robust passivation of Ge surfaces isthus a crucial step on the way to its integration in electronics at nanoscale. Before passivation,the natural oxide layer must be removed from the surface. Different methods wereinvestigate...

The decrease in feature sizes in microelectronics fabrication will soon require plasma etching processes having atomic layer resolution. The basis of plasma atomic layer etching PALE is forming a layer of passivation that allows the underlying substrate material to be etched with lower activation energy than in the absence of the passivation. The subsequent removal of the passivation with caref...

Passivation properties of intrinsic hydrogenated amorphous silicon (i a-Si:H) layers on nand p-type doped monocrystalline silicon (c-Si) are studied in two thickness series. The effect of light soaking on the passivation performance of a-Si:H i-layers of varying thicknesses are evaluated. Within the thickness series, optimized i a-Si:H layers show very good passivation properties (Seff as low a...