We have investigated the electrical activation of implanted boron in silicon-on-insulator (SOI) material using Hall effect, four-point probe, and secondary ion mass spectrometry. Boron was implanted at energies ranging from 1 keV to 6.5 keV with a dose of 331014 cm−2 into bonded SOI wafers with surface silicon thickness ranging from 300 Å to 1600 Å. In one sample set, furnace anneals at 750 °C ...

The self-consistent density response of an electron system is studied in a two-dimensional 2D lateral superlattice SL with spin-orbit interaction SOI . Under the effect of the lateral periodic potential, the single-electron 2D states are broadened into minibands that are spin split by SOI. In the case of a single fully occupied miniband, we calculate the long-wavelength limit of the polarizatio...

BACKGROUND Pertussis is poorly controlled, with the highest rates of morbidity and mortality among infants. Although the source of infant pertussis is often unknown, when identified, mothers have historically been the most common reservoir of transmission. Despite high vaccination coverage, disease incidence has been increasing. We examined whether infant source of infection (SOI) has changed i...

The coupling between the spin and orbital degrees of freedom of photons is usually very weak, but recent studies have shown that this spin-orbit interaction (SOI) can be easily detected in metal structures. Here we show how the SOI of light is enhanced in plasmonic metal nanostructures, explore the underlying mechanism for this effect, and further demonstrate how it could potentially be harness...

Hand, foot and mouth disease (HFMD) was an emerging viral infectious disease in recent years in Shenzhen. The underlying risk factors have not yet been systematically examined. This study analyzed the short-term effect of El Niño-Southern Oscillation on pediatric HFMD in Shenzhen, China. Daily count of HFMD among children aged below 15 years old, Southern Oscillation Index (SOI), and weather va...

A 40 Gbit/s delay-line interferometer realized in SOI rib waveguide technology is presented. Across the C-band we demonstrate high uniformity, low loss, low PDL, and PDF as low as 1 GHz for the SOI interferometer.