نتایج جستجو برای: photodetector
تعداد نتایج: 2457 فیلتر نتایج به سال:
The authors report the growth of needle-like high density quaternary Zn0.87Cd0.13Se0.98Te0.02nanotips on oxidized Si(100) substrate. It was found that average length and average diameter of the nanotips were 1.3 μm and 91 nm, respectively. It was also found that the as-grown ZnCdSeTe nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. Furthermore, it was found that ...
A distributed balanced photodetector with high saturation photocurrent has been experimentally demonstrated. The maximum linear DC photo-current of 33 -ranch is equivalent to 66mA in single ended photodetectors. The AC linearity at high photocurrents is also investigated.
J–V characteristics of dark current in truncated conical quantum dot infrared photodetectors (QDIPs)
Abstract Quantum Dot Infrared Photodetector (QDIP) is one of the promising candidates for infrared photodetection due to its controllable heterojunction bandgap and sensitivity normal incident radiation. It expected be superior photodetectors mature technologies such as Mercury Cadmium Telluride (HgCdTe) or a quantum well photodetector. In presented paper, we have developed theoretical model da...
Photodetectors in a configuration of field effect transistor were fabricated based on individual W18O49 nanowires. Evaluation of electrical transport behavior indicates that the W18O49 nanowires are n-type semiconductors. The photodetectors show high sensitivity, stability and reversibility to ultraviolet (UV) light. A high photoconductive gain of 104 was obtained, and the photoconductivity is ...
A distributed balanced photodetector with high saturation photocurrent and excellent linearity has been experimentally demonstrated. Distributed detection is shown experimentally to be important for the high saturation photocurrents. High-speed photodetectors with high saturation photocurrents are essential for high performance analog fiber optic links. In externally modulated links, the link g...
The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range make them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying p...
We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultravio...
Circularly polarized light is utilized in various optical techniques and devices. However, using conventional optical systems to generate, analyse and detect circularly polarized light involves multiple optical elements, making it challenging to realize miniature and integrated devices. While a number of ultracompact optical elements for manipulating circularly polarized light have recently bee...
A novel voltage interrogation method using electro-optically tunable waveguide-coupled surface plasmon resonance sensors is demonstrated. Before measurements, we use a bicell photodetector to detect the reflectance from the sensor and take the differential signal from the photodetector as the resonance condition. For different analytes, by scanning the DC voltage on the waveguide layer of the s...
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