High-reliability performance of a Q-band MMIC amplifier fabricated using TRW’s 0.1 μm production AlGaAs/GaAs HEMT process technology is reported. Operating at an accelerated life test conditions of Vds=4.2V and Ids=150mA/mm, two-stage balanced amplifiers were lifetested at threetemperatures (Ta=255 C, Ta=270 C, and Ta=285 C) in air ambient. The activation energy (Ea) is as high as 1.7 eV, achie...

The first results of the electrons drift velocity study in inverted AlGaAs/InGaAs/GaAs pseudomorphic heterostructures with donor-acceptor doping and short-period AlAs/GaAs superlattices are presented. It is theoretically shown that introduction significantly, up to one a half times, increases overshot when they enter region strong field. Localized states superlattice between quantum well substr...

A strained pseudomorphic Si0.7Ge0.3 film grown by gas-source molecular-beam epitaxy on Si~001! was irradiated at room temperature with 25 keV Ga ions. The gradual strain relaxation of the metastable Si0.7Ge0.3 film was monitored using in situ x-ray diffraction as a function of dose. Based on a dimensional argument, the ion-induced damage scales as extended defects. The Hendricks-Teller model wa...

The use of 3D simulations is essential in order to study the effects of fluctuations when devices are scaled to deep submicron dimensions. A 3D drift-diffusion device simulator has been developed to effectively simulate pseudomorphic high electron mobility transistors (pHEMTs) on a distributed memory multiprocessor computer. The drift-diffusion equations are discretized using a finite element m...