The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the k·p method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be ...

Coupled states of semiconductor quantum well (QW) excitons and photons in a two dimensional (2D) periodic lattice of microcavities are analyzed theoretically, revealing allowed bands and forbidden gaps in the energy spectrum of exciton polaritons. Photonic crystal exciton polaritons have spatially uniform excitonic constituent set by flat QWs, but exhibit periodic Bloch oscillations in the plan...

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit lateral intra-QW carrier diffusion length current spreading. The mainly impacts overall LED efficiency through sidewall nonradiative recombination, especially for $\mu$LEDs. In this paper, we study green, blue, ultraviolet C (UVC) QWs in three dimensions. We solve Poisson...

Nonlinear charge transport parallel to the layers of p-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, T = 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobil...

Noise characteristics and resistance of semimetal-type mercury-cadmium-telluride quantum wells (QWs) at the liquid nitrogen temperature are studied numerically, and their dependence on the QW parameters and on the electron concentration is established. The QW band structure calculations are based on the full 8-band k.p Hamiltonian. The electron mobility is simulated by the direct iterative solu...

We have investigated the correlation between structural and defect properties, optical performance of GeSn/SiGeSn multi-quantum well (MQW) structures as a function number QWs. Our results show that significant diffusion intermixing occur at interfaces during sample growth. The is more pronounced larger depths below surface where Sn Si composition profile in QWs layers undergoes transition from ...

We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated in the EL spectrum LEDs at 20 mA was observed 465 nm. This also exhibits blue-shift increasing currents as does main peak. Using high-resolution microscopy, we many point-like spots images belo...

Exciton-quasiparticle interactions govern the optical nonlinear response of heretostructures at exciton transitions. We theoretically analyze exciton-exciton, exciton-electron, and exciton-hole in heterostructures with GaAs/AlGaAs quantum wells (QWs), however, our theoretical approach can be applied to other types heterostructures. The exciton-quasiparticle scattering amplitudes are calculated ...

Group III-nitrides have been considered a promising choice for the realization of optoelectronic devices since 1970. Since the first demonstration of the high-brightness blue lightemitting diodes (LEDs) by Shuji Nakamura and coworkers, the fabrication of highly efficient white LEDs has passed successful developments. A serious physical issue still remained, which prevents their use for high pow...

in this paper, the effects of reflected waves of the facets on the internal optical intensity of semiconductor dfb lasers are investigated. the uniformity of optical intensity along the cavity length is evaluated with flatness parameter. the dependence of this parameter on coupling coefficient, reflectivity and grating phase at the facets is also studied. this investigation shows that in some s...