GaInNAs/GaAs multiple quantum well (MQW) structures for long wavelength emission were grown by atmospheric pressure metalorganic vapor phase epitaxy using trimethylgallium, trimethylindium, tertiarybutylarsine and dimethylhydrazine precursors. The dependence of the N concentration and the emission wavelength on the In concentration was investigated. The longest wavelengths were obtained with In...

We report here the effect of thermal annealing on the thermal conductivity of ZnTe nanowires measured on a microfabricated suspended device. Molecular dynamics simulation was used to calculate the effect of contacts on the measurements at different temperatures and to estimate the intrinsic nanowire thermal conductivity values. A decrease in thermal conductivity was observed after each thermal ...

A silicon dioxide (SiO2) electret passivates the surface of crystalline silicon (Si) in two ways: (i) when annealed and hydrogenated, the SiO2–Si interface has a low density of interface states, offering few energy levels through which electrons and holes can recombine; and (ii) the electret’s quasipermanent charge repels carriers of the same polarity, preventing most from reaching the SiO2–Si ...

(ISO-NE) for providing review comments on a draft of this report. We also thank the utility program managers who were willing to be interviewed and who provided valuable information on the RTP tariffs included in this study. The authors are solely responsible for any errors or omissions contained in this report.

Electrical activation and redistribution of 500 eV boron implants in preamorphized silicon after nonmelt laser annealing at 1150 °C and isochronal rapid thermal postannealing are reported. Under the thermal conditions used for a nonmelt laser at 1150 °C, a substantial residue of end-of-range defects remained after one laser scan but these were mainly dissolved within ten scans. The authors find...

Nickel silicides were formed on Si (100) substrates and CVD grown Si0.9Ge0.1/Si layers by low thermal budget annealing of evaporated Ni films to evaluate their utility for ultra shallow junctions. The phase formation and microstructure of silicides formed using conventional furnace and rapid thermal annealing were studied by x-ray diffraction, Rutherford backscattering (RBS), x-ray photoelectro...

Thin films of hafnium oxide (HfO2) were deposited by atomic layer deposition (ALD). The structural properties of the deposited films were characterised by transmission electron microscopy (TEM) and X-ray diffraction (XRD). We investigated the effect of phase transformations induced by thermal treatments on the mechanical properties of ALD HfO2 using nanoindentation. The elastic modulus of the a...

In this paper laser thermal processing ~LTP! is applied to induce the Ti silicide formation in replacement of rapid thermal annealing ~RTA! in narrow lines. Results show that the C40 TiSi2 is synthesized after LTP in both large and small features. With this interfacial C40 TiSi2 , the C54 TiSi2-phase formation temperature can be lowered by 100°C during subsequent annealing. The C40-C54-phase tr...

Indium tin oxide (ITO) thin films were prepared by the sol–gel dip-coating (SGDC) technique. The microstructure and electrical properties of ITO thin films crystallized using rapid thermal annealing (RTA) were compared with those of films prepared by classic thermal annealing (CTA). ITO thin films were successfully prepared by CTA at 500 jC for 30–60 min. At the same temperature of 500 jC and w...