In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications.  Increasing anodizing duration will increase nanotube lengths which itself c...

In this paper, the research advances in SIW-like (Substrate Integrated Waveguide-like) guided wave structures and their applications in the State Key Laboratory of Millimeter Waves of China is reviewed. Our work is concerned with the investigations on the propagation characteristics of SIW, half-mode SIW (HMSIW) and the folded HMSIW (FHMSIW) as well as their applications in microwave and millim...

Image-reject mixers (IRMs) and single-sideband mixers (SSMs) play a key role in many of today’s microwave and rf systems [1, 2, 3]. IRMs and SSMs reduce system cost and complexity by removing the need for expensive preselection, and one or more stages of upor downconversion. IRMs simplify downconversion by employing phase-cancellation techniques to separate the downconverted products resulting ...

The powder-blasting method is used to fabricate structures with a three-dimensional topography in glass using elastomeric masks. The relation between the mask opening width and the erosion depth is exploited to fabricate microstructures with varying depth in a single micropatterning step. As an application, planar three-dimensional micro-mixers were fabricated, which consist of a repeating conv...

In this paper, the research advances in silicon based millimeter wave and THz ICs in the State Key Laboratory of Millimeter Waves is reviewed, which consists of millimeter wave amplifiers, mixers, oscillators at Q, V and W and D band based on CMOS technology, and several research approaches of THz passive ICs including cavity and filter structures using SIW-like (Substrate Integrated Waveguide-...

The second term in the denominator of (5) represents the nonlinear emitter resistance of the amplifying transistors Q 3 and Q 6 , which is the primary source of IMD in the doubleAbstract A further development in the application of negative feedback techniques to active double-balanced mixers is described, in which the concept of single-transformer lossless feedback is employed to improve both t...