Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 microA, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current satu...

veyor. I,,, = Z,,(jw) is also the phasor current through the x terminal of the lsth current conveyor. V,,,, Vtzk and I,,h are the bounds of the linear region obtained from the transfer characteris tics or from the linear operation conditions, and these are termed the saturation voltages and current of the kth current conveyor. When the CCIIs are implemented using the above mentioned CMOS config...

The effects of Fe-implantation on the electrical characteristics Au/p-Si Schottky barrier diodes (SBDs) were studied using current–voltage (I–V) and capacitance–voltage (C–V) techniques. Rutherford Backscattering Spectrometry (RBS) Energy Dispersive Spectroscopy (EDS) results showed that Fe ions are well implanted present in Fe-implanted Si material. acquired from I–V C–V analysis fabricated, c...

In this paper, a new model based on the thevenin equivalent circuit for investigating the ultra-saturation phenomenon during the energization of a loaded power transformer is presented and its effect on the differential protection of the transformer is considered. The ultra-saturation phenomenon causes the mal-operation of the power transformer differential protection. So, the description a...

In this paper, a new model based on the thevenin equivalent circuit for investigating the ultra-saturation phenomenon during the energization of a loaded power transformer is presented and its effect on the differential protection of the transformer is considered. The ultra-saturation phenomenon causes the mal-operation of the power transformer differential protection. So, the description a...

We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.

A weak theory nonstandard analysis, with types at all finite levels over both the integers and hyperintegers, is developed as a possible framework for reverse mathematics. In this weak theory, we investigate the strength of standard part principles and saturation principles which are often used in practice along with first order reasoning about the hyperintegers to obtain second order conclusio...

Zinc oxide nanostructures are deposited on glass substrates in the presenceof oxygen reactive gas at room temperature using the radio frequency magnetronsputtering technique. In this research, the effects of zinc oxide sputtering pressure on thenanostructure properties of the deposited layer are investigated. The deposition pressurevaries from 7.5 to 20.5 mTorr. AFM resu...