نتایج جستجو برای: semiconducting material

تعداد نتایج: 368761  

Journal: :Nano letters 2009
Edward J W Crossland Marleen Kamperman Mihaela Nedelcu Caterina Ducati Ulrich Wiesner Detlef-M Smilgies Gilman E S Toombes Marc A Hillmyer Sabine Ludwigs Ullrich Steiner Henry J Snaith

We report the first successful application of an ordered bicontinuous gyroid semiconducting network in a hybrid bulk heterojunction solar cell. The freestanding gyroid network is fabricated by electrochemical deposition into the 10 nm wide voided channels of a self-assembled, selectively degradable block copolymer film. The highly ordered pore structure is ideal for uniform infiltration of an o...

Journal: :Optics letters 2009
E Gaufrès N Izard L Vivien S Kazaoui D Marris-Morini E Cassan

Photoluminescence properties of semiconducting single-wall carbon-nanotube (s-SWNT) thin films with different metallic single-wall carbon-nanotube (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer-assisted selective extraction. We show that the presence of a few m-SWNTs in the sample generates a drastic quenching of the emission. Therefore, the highly purifie...

Journal: :ACS nano 2008
Zhong Lin Wang

Zinc oxide is a unique material that exhibits exceptional semiconducting, piezoelectric, and pyroelectric properties. Nanostructures of ZnO are equally as important as carbon nanotubes and silicon nanowires for nanotechnology and have great potential applications in nanoelectronics, optoelectronics, sensors, field emission, light-emitting diodes, photocatalysis, nanogenerators, and nanopiezotro...

2008
Peng Cheng Ma Ben Zhong Tang Jang-Kyo Kim

This paper proposes a novel chemo-mechanical method to in-situ functionalize carbon nanotubes (CNTs). Ball milling in the presence of ammonium bicarbonate allowed the introduction of amine and amide groups onto the surface of CNTs, resulting in the conversion of the semiconducting behavior of CNTs from p-type to n-type. The corresponding electrical conductivity of CNT increased gradually with b...

2013
Ramón Collazo Nikolaus Dietz

In this chapter, the physical properties of group III-nitride compound semiconductors are reviewed in the context to act as semiconducting material in photoelectrocatalytic solar fuel structures. The band alignments in the InN-GaN-AlN-InN alloy system are summarized and discuss with respect to potential catalysts HOMO and LUMO states, providing efficient charge transfer in photoelectrochemical ...

2017
Jesper Hjerrild Mogens Henriksen Steven Boggs

Development of solid dielectric de transmission class cable has become a priority throughout much of the world. Interdiffusion between the semiconducting electrode materials and the dielectric inevitably causes variations in conductivity of the dielectric near the semicon which results in distortion of the electric field and space charge formation under de conditions. Analytical approximations ...

Journal: :Physical review letters 2015
G Monney C Monney B Hildebrand P Aebi H Beck

Several experiments have been performed on 1T-TiSe_{2} in order to identify whether the electronic structure is semimetallic or semiconducting without reaching a consensus. In this Letter, we theoretically study the impact of electron-hole and electron-phonon correlations on the bare semimetallic and semiconducting electronic structure. The resulting electron spectral functions provide a direct...

Journal: :Nano letters 2008
Liangti Qu Feng Du Liming Dai

We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without t...

Journal: :Science 2016
Kai Chang Junwei Liu Haicheng Lin Na Wang Kun Zhao Anmin Zhang Feng Jin Yong Zhong Xiaopeng Hu Wenhui Duan Qingming Zhang Liang Fu Qi-Kun Xue Xi Chen Shuai-Hua Ji

Stable ferroelectricity with high transition temperature in nanostructures is needed for miniaturizing ferroelectric devices. Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1-unit cell (UC) limit. The ferroelectric transition temperature T(c) of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and ...

Journal: :The Journal of organic chemistry 2011
Francisco Otón Raphael Pfattner Neil S Oxtoby Marta Mas-Torrent Klaus Wurst Xavier Fontrodona Yoann Olivier Jérôme Cornil Jaume Veciana Concepció Rovira

A series of new tetrathiafulvalene (TTF) derivatives bearing dimethoxycarbonyl and phenyl or phthalimidyl groups fused to the TTF core (6 and 15-18) has been synthesized as potential soluble semiconductor materials for organic field-effect transistors (OFETs). The electron-withdrawing substituents lower the energy of the HOMO and LUMO levels and increase the solubility and stability of the semi...

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