A semiconductor scintillation-type gamma radiation detector is discussed in which the gamma-ray absorbing semiconductor body is impregnated with multiple small direct-gap semiconductor inclusions of bandgap slightly narrower than that of the body. If the typical distance between them is smaller than the diffusion length of carriers in the body material, the photo-generated electrons and holes w...

Articles you may be interested in Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor high-electron-mobility transistors Appl. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-...

Evaluation techniques for semiconductor devices are keys for device development with low cost and short period. Especially, dopant and depletion layer distribution in device is critical for electrical property of the device and is needed to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHO-SNDM) is one of the promising techniques for semiconductor device evaluation. We devel...

Mutually-coupled semiconductor lasers are of great current interest because of the important insight they provide into coupled physical, chemical, and biological systems. Two semiconductor lasers either with or without optoelectronic feedback are mutually coupled together through optoelectronic paths. It is found that mutual coupling can signi cantly a ect the dynamics of the semiconductor lase...

A bay configuration arranged along a central spine and served by an automated monorail material handling system are common designs for the layout and material handling system in new semiconductor wafer fabrication facilities. This paper investigates the facility design problem in semiconductor fabrication facilities and proposes a procedure to determine the optimal spine layout design given a d...

The photovoltaic and the semiconductor industries are in growth and it is necessary to supply a large amount of silicon to maintain this growth. Since silicon is still the best material for the manufacturing of solar cells and semiconductor components so the pure silicon like solar grade and semiconductor grade materials are demanded. There are two main routes for silicon production: metallurgi...

The carbon nanotube and graphene nanoribbon band structure is derived using the two-band k · p method and shown to have a similar band structure as a III-V semiconductor. Contrary to a previous claim, it is shown that the tunnelling probability is lower for a graphene based semiconductor than for a III-V semiconductor with the same bandgap. Considering the relation between the bandgap and the e...

Articles you may be interested in Fully complementary metal-oxide-semiconductor compatible nanoplasmonic slot waveguides for silicon electronic photonic integrated circuits Appl. Compact models considering incomplete voltage swing in complementary metal oxide semiconductor circuits at ultralow voltages: A circuit perspective on limits of switching energy Monolithically integrated low-loss silic...

Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we de...

Generation of short optical pulses in semiconductor lasers is of practical interest for an increasing number of applications. It is also of fundamental interest because of its tight relation with the field of semiconductor laser dynamics. After an introductory review, we compare the performances of gain-switching, Q-switching and mode-locking techniques. The comparison is illustrated by experim...