We describe the electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays fabricated on doped semiconductor substrates. The hybrid metal-semiconductor forms a Schottky diode structure, where the active depletion region modifies the substrate conductivity in real-time by applying an external voltage bias. This enables effective control of the resonance en...

In this supplement to formal class lectures, we develop the small signal models for metaloxide-semiconductor field-effect transistor (MOSFET) technologies. Despite the exclusive focus on MOS technologies, the reader will surmise that the fundamental concepts and strategies of small signal modeling presented herewith are generally applicable to bipolar, III-V compound, and other semiconductor de...

We present the development of a monolithically integratable optical isolator. The device is a semiconductor optical amplifier with magnetized ferromagnetic metal contact. 12.7dB isolation and optical transparency are demonstrated. The spectral dependence is studied. ©2005 Optical Society of America OCIS codes: (230.3240) Isolators; (250.5980) Semiconductor optical amplifiers; (230.3810) Magneto...

A device model of biological molecule sensors based on semiconductor nanowires has been developed. This model of a bioFET is based on the concept of the electrolytic absolute electrode potential. From that starting point a semiconductor device model of the nanowire solution biomolecule system was derived. The model includes the Gouy-Chapman-Stern model of the salt solution double layer, site bi...

Simulators in power electronics are less developed than in other electronic fields. The main modelling methods are between the numerical simulation of semiconductor device equations that hardly simulate circuits, and equivalent circuit models that show poor accuracy. We propose the application of the bond graph techniques to model modular power semiconductor devices. Furthermore, the IGBT is a ...

We report the controlled deposition of close-packed monolayer arrays of 5 nm diameter Au clusters within patterned regions on GaAs device layers, thus demonstrating guided self-assembly on a substrate which can provide interesting semiconductor device characteristics. Uniform nanometer scale ordering of the clusters is achieved by a chemical selfassembly process, while micron scale patterning i...

In this paper the use of iterative methods for the solution of the carrier continuity equations in three-dimensional semiconductor device simulators is summarized. An overview of the derivation of the linear systems from the basic stationary semiconductor device equations is given and the algebraic properties of the nonsymmetric coefficient matrices are discussed. Results from the following cla...

Although simulators capable of dealing with the different kinds of processes in the simulation of semiconductor device fabrication are widely available, the combination of several of them to a whole process flow is still a complicated endeavor. This paper points out the difficulties arising in data exchange between simulators and we present as a solution the WAFER-STATE SERVER. Our WAFER-STATE ...

we have simulated the carrier concentration and temporal response characteristics of a back-gated metal- semiconductor-metal (bg-msm) photodetector in one dimension as a function of optical pulse position on the active region in an equilibrium condition (without bias voltage to the photodetector). we have adopted a nonlinear ambipolar transport model to simulate the behavior of photo-generated ...

The bandgap of a semiconductor is one of its most important electronic properties. It is often considered to be a fixed property of the semiconductor. As the dimensions of semiconductors reduce, however, many-body effects become dominant. Here, we show that doping and dielectric, two critical features of semiconductor device manufacturing, can dramatically shrink (renormalize) the bandgap. We d...