نتایج جستجو برای: semiconductor laser

تعداد نتایج: 237377  

2001
Yun Liu Peter Davis Yoshiro Takiguchi Tahito Aida Shigeru Saito

We experimentally investigate the synchronous response of a semiconductor laser to the injection of a periodic or chaotic oscillating optical signal that is generated by a similar semiconductor laser with optical feedback. We show that there are two different types of synchronous response, appearing in separate regimes of laser frequency detuning and injection strength. They are distinguished b...

2013
Linlin Lu Yuechun Shi Xiangfei Chen

We report the first experimental realization of four-channel DFB laser array with equivalent phase shift (EPS) based on the reconstruction-equivalent-chirp (REC) technique for CWDM systems. OCIS codes: (140.0140) Lasers and laser optics; (140.5960) Semiconductor lasers

Journal: :Physical review letters 2006
Peter J Pauzauskie Donald J Sirbuly Peidong Yang

Nanowires of the wide band-gap semiconductor gallium nitride (GaN) have been shown to act as room-temperature uv lasers. Recent advances in nanomanipulation have made it possible to modify the shape of these structures from a linear to a pseudoring conformation. Changes to the optical boundary conditions of the lasing cavity affect the structure's photoluminescence, photon confinement, and lasi...

Journal: :Optics letters 1986
J Salzman R Lang A Larson A Yariv

GaAs/GaAlAs heterostructure lasers with a monolithic confocal unstable resonator were demonstrated. The curved mirrors satisfying the confocal condition were fabricated by etching. Close to threshold, the lasers operate in a single lateral mode with a nearly collimated output beam. A single-lobe far-field intensity distribution as narrow as 1.9 degrees full width at half maximum was measured.

2001
G. Belenky L. Shterengas C. W. Trussell

The trade-off between the effect of leakage suppression and the increase of related optical loss due to placement of the p-doping in 1.3-1.55μm InGaAsP MQW edgeemitting lasers is detailed. The effect of the Zn doping profile on laser characteristics is illustrated by experimental results obtained for telecom lasers and high power lasers. The design approach combining broadened waveguides with p...

Journal: :SIAM J. Applied Dynamical Systems 2007
Hartmut Erzgräber Bernd Krauskopf Daan Lenstra

We study the dynamics and bifurcations of a semiconductor laser with delayed filtered feedback, where a part of the output of the laser re-enters after spectral filtering. This type of coherent optical feedback is more challenging than the case of conventional optical feedabck from a simple mirror, but it provides additional control over the output of the semiconductor laser by means of choosin...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه شیراز - دانشکده علوم 1390

any change in the refractive index of a laser active medium can lead to serious degradation of beam quality, laser beam modes, laser performance and variation in the intensity distribution. alteration in the refractive index of laser active medium is especially notable in high power lasers. it is clear that in the laser beam production, the pumping agent induces a great amount of heat which...

Journal: :IEICE Transactions 2012
Minoru Yamada Itaru Tera Kenjiro Matsuoka Takuya Hama Yuji Kuwamura

Reduction of the intensity noise in semiconductor lasers is an important subject for the higher performance of an application. Simultaneous usage of the superposition of high frequency current and the electric negative feedback loop was proposed to suppress the noise for the higher power operation of semiconductor lasers. Effective noise reduction of more than 25 dB with 80 mW operation was exp...

Journal: :THE JOURNAL OF JAPAN SOCIETY FOR LASER SURGERY AND MEDICINE 1988

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید