نتایج جستجو برای: semiconductor thin film
تعداد نتایج: 241592 فیلتر نتایج به سال:
Cadmium oxide (CdO) thin films have been deposited by a locally developed spray pyrolysis method onto glass substrate at 473K. The optical and electrical properties of the as-deposited and annealed films are studied in details. The surface morphology of the samples was studied by scanning electron microscopy (SEM). The SEM micrograph of as-deposited film shows uniform deposition over the substr...
We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...
We report the fabrication of high-performance, printed, n-channel organic field-effect transistors (OFETs) based on an N,N-dialkyl-substituted-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) derivative, PDI-RCN2, optimized by the solvent-vapor annealing (SVA) process. We performed a systematic study on the influence of solubility and the chemical structure of a solvent used for the SVA pr...
The maximum entropy method (MEM) is widely used in research fields such as linguistics, meteorology, physics, and chemistry. Recently, MEM application has become a subject of interest in the semiconductor engineering field, in which devices utilize very thin films composed of many materials. For thin film fabrication, it is essential to thoroughly understand atomic-scale structures, internal fi...
Picene, which is an organic p-channel semiconductor and a component of superconductors, was derivatized with a thiadiazole-dioxide moiety to afford a novel acceptor molecule (PTDAO₂). PTDAO₂ can form stable anion radical species in solution and as a crystal, and its neutral crystalline thin film exhibits n-type transistor characteristics.
A fluorenone based alternating copolymer () with a furan based fused aromatic moiety has been designed and synthesized. exhibits a small band gap with a lower HOMO value. Testing this polymer semiconductor as the active layer in organic thin-film transistors results in hole mobilities as high as 0.15 cm(2) V(-1) s(-1) in air.
An anthracene derivative, 2,6-diphenyl anthracene (DPA), was successfully synthesized with three simple steps and a high yield. The compound was determined to be a durable high performing semiconductor with thin film device mobility over 10 cm(2) V(-1) s(-1). The efficient synthesis and high performance indicates its great potential in organic electronics.
Use of a carefully designed small-molecule organic semiconductor based on an oxidized diketopyrrolopyrrole core enables the fabrication by solution processing of electron-transporting (n-channel) blend-based organic thin-film transistors with high electron mobility (0.5 cm(2)/Vs) and high operating stability even when the devices are exposed to ambient air for prolonged periods of time.
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