In view of difficulties of the planar MOSFET technology to get the acceptable gate control over the channel FinFET technology based on multiple gate devices is better technology option for further shrinking the size of the planar MOSFET [1]. For double gate SOIMOSFET the gates control the channel created between source and drain terminal effectively. So the several short channel effects like DI...

Near-Infrared Spectroscopy (NIRS) allows the recovery of cortical oxy- and deoxyhemoglobin changes associated with evoked brain activity. NIRS is a back-reflection measurement making it very sensitive to the superficial layers of the head, i.e. the skin and the skull, where systemic interference occurs. As a result, the NIRS signal is strongly contaminated with systemic interference of superfic...

this paper investigates the multi-band ofdm (mb-ofdm) based physical (phy) layer proposal for ieee 802.15.3a working group on short-range high data-rate ultra-wide-band (uwb) communications. an overview of the mb-ofdm phy layer architecture with its various parameters is presented and the optimal choice of critical parameters is discussed. next, we derive the theoretical un-coded bit error rate...

We present results of fully 2D quantum-mechanical (QM) simulations of nanoscale MOSFET's. The validity of semiclassical transport models are first discussed. Then, QM effects on threshold voltage, subthreshold slope and short-channel performances are addressed. We show that QM effects significantly affect device performances in the nanoscale range.

A brief review of the main physical results about the low temperature characterization and modeIing of Si CMOS devices is presented. More specifically, the carrier mobility law. the saturation velocity, the short channel effects, the impact ionization phenomenon. the hot carrier effects or the parasitic leakage current are physically discussed.

[1] Hyporheic exchange flows were simulated using MODFLOW and MODPATH to estimate relative effects of channel morphologic features on the extent of the hyporheic zone, on hyporheic exchange flow, and on the residence time of stream water in the hyporheic zone. Four stream reaches were compared in order to examine the influence of stream size and channel constraint. Within stream reaches, the in...

Single sodium channel currents were analysed in cell attached patches from single ventricular cells of guinea pig hearts in the presence of a novel cardiotonic compound DPI 201-106. The mean single channel conductance of DPI-treated Na channels was not changed by DPI (20.8 +/- 4 pS, control, 3 patches; 21.3 +/- 1 pS with DPI, 5 mumol/1,3 patches). DPI voltage-dependently prolongs the cardiac so...

Conventional CMOS technology's performance deteriorates due to increased short channel effects. Double-gate (DG) FinFETs has better short channel effects performance compared to the conventional CMOS and stimulates technology scaling. The main drawback of using CMOS transistors are high power consumption and high leakage current. Fin-type field-effect transistors (FinFETs) are promising substit...