نتایج جستجو برای: shotcky barrier diode
تعداد نتایج: 109997 فیلتر نتایج به سال:
Abstruct-Monolithic diode grids have been fabricated on 2-cm square gallium-arsenide wafers in a proof-of-principle test of a quasi-optical varactor millimeter wave frequency multiplier array concept. An equivalent circuit model based on a transmission-line analysis of plane wave illumination was applied to predict the array performance. The doubler experiments were performed under far-field il...
We review stabilization of deterministic chaotic as well as noise-induced spatio-temporal patterns in spatially extended nonlinear systems by time-delayed feedback control. Different control schemes, e.g., a diagonal control matrix, or global control, or combinations of both, are compared. Specifically, we use two models of nonlinear charge transport in semiconductor nanostructures which are of...
The current through a resonant tunneling diode consisting of Si quantum dots embedded in a SiO2 matrix is calculated and the resonance broadening effects caused by distributions of quantum dot diameter and asymmetric barrier thicknesses are simulated. It is demonstrated that a size distribution is extremly critical for the use of these structures as selective energy contacts for hot carrier sol...
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar MOSFETs provide challenges due to their high density of interface traps significant gate-to-drain capacitance. In order enhance the reverse recovery property device, a Schottky barrier diode (SBD) was added source contact area, top current spreading region, trench-etched double-diffused MOS...
In this study, the performance of Schottky barrier diodes (SBD) based on β-Ga2O3 with floating metal rings (FMR) was investigated using numerical simulations Technology Computer-Aided Design (TCAD) software. The simulation parameters β-Ga2O3, including those in lowering, impact ionization, and image-force-lowering models, were extracted from experimental results. Similar forward conduction char...
Active refrigeration of optoelectronic components through the use of thin film solid state coolers based on III-V materials is proposed and investigated. Enhanced cooling power comparing to the thermoelectric effect of the bulk material is achieved through thermionic emission of hot electrons over a heterostructure barrier layer. It is shown that these heterostructures can be monolithically int...
SensL C-, Jand R-Series SiPM sensors have a fast, capacitively coupled output that gives a high speed output signal, which is suitable for timing applications. Summing the fast output directly is not recommended as this would negatively affect the resulting signal. By introducing a diode pair (fast Schottky) as shown in Figure 1, the Fast signal from the active SiPM is transferred to the Common...
The fabrication of Metal-DNA-Metal (MDM) structure-based high sensitivity sensors from DNA micro-and nanoarray strands is a key issue in their development. The tunable semiconducting response of DNA in the presence of external electromagnetic and thermal fields is a gift for molecular electronics. The impact of temperatures (25-55 °C) and magnetic fields (0-1200 mT) on the current-voltage (I-V)...
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