Strained silicon germanium carbon (Si1 x yGexCy or SiGeC) on silicon was oxidized using a novel photo-oxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacitors were fabricated with the resulting oxide and electrical characterization was done. The SiGeC MOS capacitors proved to have high leakage current...

In this paper, we mainly present a new simple, efficient and nondestructive Raman scattering analysis method to study the distribution of strain in SiGe alloy films. The method can simultaneously determine both Ge fractional composition x and strain of SiGe films. We use the Ar+ laser lines (514.5, 488 and 457.9 nm) to detect the information of different depth of SiGe layers. The results show t...

We have studied in depth the performance of superficial strained Si/Si1−x Gex channel MOSFETs. To do so, we developed a two-dimensional drift-diffusion simulator including inversion layer quantization and low-field mobility curves obtained by means of a Monte Carlo simulator. We have reproduced experimental results. The dependences of the performance enhancement obtained in these devices on the...

For an integer kwith k ≥ 2 and a pair of connected graphs F1 and F2 of order at least three, we say that {F1, F2} is a k-forbidden pair if every k-connected {F1, F2}-free graph, except possibly for a finite number of exceptions, is Hamiltonian. If no exception arises, {F1, F2} is said to be a strong k-forbidden pair. The 2-forbidden pairs and the strong 2-forbidden pairs are determined by Faudr...

P-channel Sil-@ex MOSFETs with peak Ge content x =0.3, 0.4, and 0.5 have been fabricated via MBE and experimentally characterized from room temperature down to 5K. Mobility enhancements relative to identically processed Si controls were largest at the lowest tempera2 tures. The highest mobility measured, pm = 1622 cm N.sec for the x = 0.3 SiGe device, was approximately a factor of four higher t...

in the past few decades, the use of remote sensing techniques for mapping and monitoring salinity changes in the soils has been developed. for this, this research was done in the army field of gorgan in 2011- 12 to assess possibility of this technique application. in the first step, 101 soil samples were taken from the soil (30 cm depth) during two stages (end of march and start of may) and ele...

OBJECTIVE Exercise is a protective factor for cardiovascular morbidity and mortality, with unclear mechanisms. Changing the myocardial metabolism causes harmful consequences for heart function and exercise contributes to metabolic adjustment modulation. Peroxisome proliferator-activated receptors (PPARs) are also myocardium metabolism regulators capable of decreasing the inflammatory response. ...