We have reported the effects of substituting a transition metal in silicide on electrochemical performance silicide/Si composite anode for lithium-ion batteries (LIBs); Cr0.5V0.5Si2/Si electrode exhibited much better cyclability compared with CrSi2/Si and VSi2/Si electrodes. Herein, we investigated CrxV1–xSi2/Si slurry its application LIBs, results obtained were to those gas deposition (GD) ele...

The effect of Co, Pd and Pt ultrathin films on the kinetics formation Ni-silicide by reactive diffusion is investigated. 50 nm Ni/1 X/ Ni (X = Pd, Pt) deposited Si(100) substrates are studied using in-situ ex-situ measurements X-ray diffraction (XRD). presence or thin in between layers delays metal rich phase compared to pure Ni/Si system thus these act as barriers. A simultaneous silicide (δ-N...

The dynamics of the pattern induced on a silicon surface by oblique incidence 40 keV Fe ion beam is studied. results are compared with those obtained for two reference systems, namely noble gas either without or co-deposition. techniques employed include Atomic Force Microscopy, Rutherford Backscattering Spectrometry, Transmission Electron X-ray Photoelectron and hard photoelectron spectroscopi...

Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy. The films were annealed at various temper...

In this work, the evolution of MC-type Nb-rich primary carbides in a 35Ni-25Cr-Nb-type refractory alloy, commonly known as HP40-Nb, and its transformation into Ni-Nb silicide G-phase (Ni16Nb6Si7), has been studied. For purpose, experimental technique scanning electron microscopy was used together with X-ray microanalysis to detect changes chemical composition niobium carbide over time at given ...

In this paper, the circuit performances such as circuit delay, RF characteristics and SRAM static noise margin are presented. These analyses are performed by threedimensional device simulation using Mixed-mode option. The benefit of circuit delay in scaling will be maintained by introducing new structure (SOI, multi-gate), material (silicide, metal gate) and strain effect. However, concerning w...