Amorphous tantalum oxide thin films were deposited by reactive rf magnetron sputtering onto @001# silicon substrates. Growth temperature, oxygen partial pressure, and total gas pressure have been varied to obtain thin films with different densities. The thin films were analyzed by glancing angle-of-incidence x-ray diffraction, atomic force microscopy, and variable angle-of-incidence spectroscop...

In this paper, we analyze application of amorphous In–Ga–Zn–O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational volt...

Amorphous silicon (a-Si) thin film transistors (TFT’s) were fabricated on free-standing, clear plastic substrates with a maximum process temperature of up to 250°C. An a-Si TFT backplane for active matrix OLED (AMOLED) application was also made on such substrates. The performance of both the TFT’s and the AMOLED backplane are excellent. These results will enable the fabrication of flexible AMLC...

This work was an experimental study of the aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) for the fabrication of polycrystalline silicon film. The a-Si film was deposited on silicon wafer by low pressure chemical vapor deposition (LPCVD) technique. Aluminum was sputtered on to the a-Si film at different thicknesses. The samples were annealed for 3 h at different temperatures...

Hydrogenated nanocrystalline silicon (nc-Si:H) has attracted greater attention because of its improved transport properties with respect to hydrogenated amorphous silicon (a-Si:H) [1]. In addition, its deposition conditions are compatible with amorphous silicon technology which makes it possible to use both materials in the same device. In this sense, it has been proposed as a candidate for the...

In this paper, we describe hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT)-based active-matrix arrays for active-matrix organic light-emitting displays (AM-OLEDs). The proposed pixel electrode circuits based on three a-Si:H TFTs can supply a continuous output current for AM-OLEDs. Each pixel circuit has compensation circuits that can adjust for the OLED and a-Si:H TFTs electr...

We report on a fabrication method of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) using a maskless laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The obtained results show that it is possible to fabricate a-Si:H TFTs using a well-established a-Si:H TFT technology in combination with the maskless lithogra...

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