Silicon carbide (SiC) has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality SiC critical aspect advancement scalable on-chip networks. In this work, we numerically design, fabricate, demonstrate performance monolithic metalenses from suitable optical operations. We engineer...

Related Articles A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles J. Appl. Phys. 113, 024909 (2013) Carbon flux assisted graphene layer growth on 6H-SiC(000-1) by thermal decomposition J. Appl. Phys. 113, 014311 (2013) Fabrication of large-grained thin polycrystalline silicon films on foreign substrates by titanium-assiste...

Silicon carbide (SiC) is an indirect wide band gap semiconductor that utilized in many industrial applications due to its extreme physical properties. SiC nanoparticles (NPs) exhibit a versatile surface chemistry, fluoresce from the ultraviolet near-infrared spectral ranges, and their sizes can be tuned one hundreds of nanometers. Yet, fluorescent NPs have received far less attention by scienti...

In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips d...

The rapid solidification of liquid silicon carbide (SiC) is studied by molecular dynamic simulation using the Tersoff potential. The structural properties of liquid and amorphous SiC are analyzed by the radial distribution function, angular distribution function, coordination number, and visualization technology. Results show that both heteronuclear and homonuclear bonds exist and no atomic seg...

We demonstrate strong nonlinearities of n2=8.6±1.1×10(-15)  cm2 W(-1) in single-crystal silicon carbide (SiC) at a wavelength of 2360 nm. We use a high-confinement SiC waveguide fabricated based on a high-temperature smart-cut process.