In this paper, we present models and tools developed and used by the Device Modelling Group at the University of Glasgow to study statistical variability introduced by the discreteness of charge and matter in contemporary and future Nano-CMOS transistors. The models and tools, based on Drift-Diffusion (DD), Monte Carlo (MC) and NonEquilibrium Green’s Function (NEGF) techniques, are encapsulated...

The paper deals with the symbolic analysis of linear circuits with modern active elements using the SNAP program. The simulator can perform both classical and approximate analyses. All device models are stored in a text library, which can be easily extended. Device parameters can be defined as simple symbols or as formulae in the netlist. This allows the simulation of electronic circuits both w...

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this stru...

With the view to analyzing piezoresistive effects in silicon microstructures we implemented a rigorous physically-based model in the multidimensional general purpose device simulator DESSIS'~~. In this model, the dependence of the piezoresistive coefficients on temperahue and doping concentration is included in a numerically hactable way. Using a commercial TCAD system (ISE), the practicability...

Network Management (NMS) application vendors, often encounter a situation where the device being managed or tested (which includes an SNMP agent) is not available at the time of the NMS application devel opment, whereupon this becomes the critical path in the development cycle of the new device. To shorten this critical path, we’ve developed GeNMSim, which is a Tcl/Tk based Multi Platform SNMP ...

A silencer to attenuate engine exhaust noise using active control methods is developed. The device consists of an electrically driven valve, combined with a buffer volume, which is connected to the exhaust outlet. Using the mean flow through the valve and the pressure fluctuations in the volume, the valve regulates the flow in such a way that only the mean flow passes through the exhaust outlet...

Objectives This study shows the development and validation of a dental anesthesia-training simulator, specifically for the inferior alveolar nerve block (IANB). The system developed provides the tactile sensation of inserting a real needle in a human patient, using Virtual Reality (VR) techniques and a haptic device that can provide a perceived force feedback in the needle insertion task during...

TENS (Transcutaneous Electrical Nerve Stimulator) is a therapeutic device used to deliver electric current through one’s skin. As the device is used on the human body, safety concern becomes a matter that needs special attention. One option for electrical safety is testing whether the electrode has attached properly to the skin. The test is done in the interval of the simulator pulse. This opti...

For the prediction of the device performance of FinFET structures three-dimensional device simulation is inevitable. Due to the strong quantum mechanical confinement in the channel, quantum correction models need to be applied. Two of these models, where one is based on the correction of the densityof-states in a pre-processing step and the other calculates a correction for the band edge energy...

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also c...