587 Abstract— The absence of deep traps for electrons in the spectrum of As 40 Se 30 S 30 localized states films obtained by ion sputtering was determined. Bipolar drift of charge carriers was found in amorphous As 40 Se 30 S 30 films of chalcogenide glassy semiconductors, obtained by ion-plasma sputtering of high-frequency, unlike the films of these materials obtained by thermal evaporation.

SmFeSiC thin films have been obtained by sputtering SmFe/C(Si) multilayers with a Ta underlayer on Si substrates and subsequently annali The coercivity of the SmF films strongly depends on the sputtering and annea itions. The influence of the thickness of the Ta underlayer, the thickness ratio of SmFe to C(Si), the argon pressure and heat treatment Inplane Coercivities up to 7.2 kOe and squaren...

Anatase TiO2 thin films were deposited in a d.c. reactive magnetron sputtering system. It was found that there is a strong dependence between anatase-rutil structures of TiO2 films and the technological conditions, the most relevant parameter being the oxygen percentage from the argon and oxygen mixture. Our measurements carried out for electrical properties of d.c. magnetron sputtering TiO2 th...

We have conducted experiments on the sputtering of water ice by 100 keV Ar+ between 20 and 150 K. Our findings indicate that the temperature dependence of the total sputtering yield is heavily influenced by the thermal and irradiation history of the ice, showing a complex dependence on irradiation fluence that is correlated to the ejection of O2 molecules. The results suggest that O2 produced b...

Absolute sputtering yields of Sn in the solid and liquid phases for incident Hþ, Dþ, and Heþ ions with energies of 300 to 1000 eV were determined via a series of experiments using the ion-surface interaction experiment (IIAX), a facility designed to measure such ion-surface interactions. IIAX incorporates an ion source with an array of ion beam filters and optics to bring a near mono-energetic ...

Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic pro...

A novel radio frequency magnetron sputtering method for the deposition of composite films which consist of chromium oxide and chromium ~Cr2O3/Cr-cermet! is presented. As an extension to conventional reactive sputtering of a Cr target in an argon and oxygen atmosphere the oxygen flow into the process chamber is switched periodically on and off. This leads to an oscillating oxygen partial pressur...

Room-temperature perpendicular magnetic anisotropy ~PMA! was observed in Ni/Pt multilayer films having 7–30 Å Ni and constant 3 Å Pt sublayer thickness, prepared by magnetron sputtering at an Ar sputtering pressure of 7 mTorr. To understand the origin of PMA, the magnetoelastic anisotropy was determined from delicate in situ stress and ex situ magnetostriction coefficient measurements. Tensile ...

This article reviews the present state of the art in the field of flexible antibacterial coatings which efficiently kill bacteria on their surfaces. Coatings are formed using a reactive magnetron sputtering. The effect of the elemental composition and structure of the coating on its antibacterial and mechanical properties is explained. The properties of Cr-Cu-O, Al-Cu-N, and Zr-Cu-N antibacteri...

In the present work, the deposition and characterization of dielectric, piezoelectric, semiconductor and conductor films by RF diode / RF magnetron sputtering process for applications in MEMS fabrication have been reported. Thin films of silicon dioxide, silicon nitride, amorphous silicon, zinc oxide and lanthanum doped lead zirconate titanate (PLZT) were prepared by RF sputtering process and e...