0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.06.022 ⇑ Corresponding author. Tel.: +82 2 2123 4619; fax E-mail address: [email protected] (I. Yun). In this paper, the characteristic degradations of multi-finger MOSFETs with different gate structures are experimentally investigated when the gate voltage stress is applied. Here, the degradations of th...

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and m...

The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...

In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive (PBS). The intact FBFETs have a subthreshold swing (SS) 0.12 mV/dec, an on-current ~10-4 A, threshold voltage (VTH) -0.76 V. There is negligible change in SS when are stressed by gate-bias corresponding to electric field 5.4 MV/cm across gate ...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

The tunnel field-effect transistor (TFET) is considered a promising next-generation due to its potentially limit-breaking low subthreshold swing and better immunity against short-channel effects. However, the ON-state current (ION) of TFETs has been critical problem. In this work, we investigated effects source doping concentration gradient (SDG) on ION n-type Si gate-all-around (GAA) nanowire ...

Abstract The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling supply in logic gates. Here we demonstrate GaAs FET with monolayer graphene gate which was externally controlled by an additional control gate. forms Schottky junction channel, modulating channel conductivity. sets work function gate, controlling barrier height therefore voltage, re...

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced film thickness and surface roughness. As of precursor increased, films thicker smoother. device performance roughness layer. Decreased resulted in a with lower field-effect mobility, larger sub...

This report is on the electrical properties of all-amorphous junction field-effect transistors (JFETs) based n-type zinc oxynitride (ZnON) as a channel material and room-temperature deposited p-type ZnCo2O4 (ZCO) heterojunction gate. Devices with different thicknesses are thereby compared. Best devices 48 nm layer thickness achieve drain current on/off–ratios 105 low subthreshold swing 134 mV d...