The problem of optimal data collection to efficiently learn the model parameters of a graphite nitridation experiment is studied in the context of Bayesian analysis using both synthetic and real experimental data. The paper emphasizes that the optimal design can be obtained as a result of an information theoretic sensitivity analysis. Thus, the preferred design is where the statistical dependen...

The continuous demand for improved CMOS transistors necessitate smailer device dimensions. The reduction in chip size into the deep sub-micron dimensions opens up new scientific and engineering challenges. One of the most critical material in developing deep sub-micron MOS transistors is high quality ultrathin (a few nm) gate dielectric film. As the gate dielectric thickness is reduced to below...

An identical set of thermal oxidation and nitridation experiments has been performed for four common dopants and self-diffusion in Si. Selectively perturbing the equilibrium point-defect concentrations by these surface reactions is a powerful tool for identifying the relative importance of the various atomic-scale diffusion mechanisms. We obtain bounds on the fractional contributions of the sel...

Fe3N submicrorods with desirable magnetic properties were prepared from a designed metal-organic framework precursor via a modified ethanediamine nitridation route. Magnetic resonance imaging using the Fe3N submicrorods was investigated carefully, confirming the Fe3N submicrorod could be acceptable as a significant contrast agent for its outstanding concentration dependent signal and high r2 re...

Effect of Nitridation on Low-Frequency (1/f) Noise in nand p-MOSFETS with HFO2 Gate Dielectrics P. Srinivasan, E. Simoen,* Z. M. Rittersma, W. Deweerd, L. Pantisano, C. Claeys,** and D. Misra* IMEC, Kapeldreef 75, B-3001 Leuven, Belgium Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 00712, USA Philips Research Leuven, Belgium Electrical...

Germanium channel MOSFETs are considered one of the promising options for high performance CMOS technology because of the high electron and hole mobility, as well as high ballistic carrier injection velocity in germanium. One of the most important challenges in integrating the Ge MOSFETs is the formation of high quality gate dielectrics on the Ge surface. Several attempts have been made in rece...

Uranium nitride (UN) has been proposed as an accident tolerant fuel due to its enhanced thermal properties compared the standard UO2. However, low oxidation resistance, implementation in water cooled reactors not allowed. A method improve corrosion resistance involves doping with oxide scale forming elements such aluminum or chromium. In this work, UN microspheres were produced by internal gela...

(GaN)1-x(ZnO)x solid-solution nanostructures with superior crystallinity, large surface areas and visible light absorption have been regarded as promising photocatalysts for overall water splitting to produce H2. In this work, we report the preparation of (GaN)1-x(ZnO)x solid-solution nanorods with a high ZnO solubility up to 95% via a two-step synthetic route, which starts from a sol-gel react...

This study aims at achieving highly crystalline and smooth Nitrogen-polar (N-polar) GaN layers deposited on c-plane sapphire by metal organic vapor phase epitaxy (MOVPE). The influence of nitridation, temperature and V/III ratio on the polarity, quality and coalescence of GaN is systematically investigated. It was observed that the initial nitridation of sapphire before GaN growth is critical f...