نتایج جستجو برای: transition metal dichalcogenide

تعداد نتایج: 436887  

2015
Stanley S Chou Na Sai Ping Lu Eric N Coker Sheng Liu Kateryna Artyushkova Ting S Luk Bryan Kaehr C Jeffrey Brinker

Establishing processing-structure-property relationships for monolayer materials is crucial for a range of applications spanning optics, catalysis, electronics and energy. Presently, for molybdenum disulfide, a promising catalyst for artificial photosynthesis, considerable debate surrounds the structure/property relationships of its various allotropes. Here we unambiguously solve the structure ...

Journal: :Nanoscale 2015
L M Xie

Engineering electronic structure of atomically thin two-dimensional (2D) materials is of great importance to their potential applications. In comparison to numerous other approaches, such as strain and chemical functionization, alloying can continuously tune the band gaps in a wide energy range. Atomically thin 2D alloys have been prepared and studied recently due to their potential use in elec...

2014
Nourdine Zibouche Mahdi Ghorbani-Asl Thomas Heine

Transition-metal dichalcogenide nanotubes (TMC-NTs) are investigated for their electromechanical properties under applied tensile strain using density functional-based methods. For small elongations, linear strain-stress relations according to Hooke’s law have been obtained, while for larger strains, plastic behavior is observed. Similar to their 2D counterparts, TMC-NTs show nearly a linear ch...

Journal: :ACS nano 2015
Matthew Z Bellus Frank Ceballos Hsin-Ying Chiu Hui Zhao

We report the observation of trions at room temperature in a van der Waals heterostructure composed of MoSe2 and WS2 monolayers. These trions are formed by excitons excited in the WS2 layer and electrons transferred from the MoSe2 layer. Recombination of trions results in a peak in the photoluminescence spectra, which is absent in monolayer WS2 that is not in contact with MoSe2. The trion origi...

Journal: :Nano letters 2015
Matthew Yankowitz Stefano Larentis Kyounghwan Kim Jiamin Xue Devin McKenzie Shengqiang Huang Marina Paggen Mazhar N Ali Robert J Cava Emanuel Tutuc Brian J LeRoy

Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scann...

2000
I. Milošević T. Vuković

The full geometrical symmetry groups (the line groups) of the monolayered, 2Hb and 3R polytypes of the inorganic MoS2 and WS2 microand nanotubes of arbitrary chirality are found. This is used to find the coordinates of the representative atoms sufficient to determine completely geometrical structure of tubes. Then some physical properties which can be deduced from the symmetry are discussed: el...

Journal: :Physical review letters 2014
B Hildebrand C Didiot A M Novello G Monney A Scarfato A Ubaldini H Berger D R Bowler C Renner P Aebi

The transition-metal dichalcogenide 1T-TiSe2 is a quasi-two-dimensional layered material with a charge density wave (CDW) transition temperature of T(CDW) ≈ 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature-dependent resistivity, and strongly perturbate the CDW phase. Here, we study the structural and doping nature of su...

Journal: :Nanoscale 2016
Jan Luxa Ondřej Jankovský David Sedmidubský Rostislav Medlín Miroslav Maryško Martin Pumera Zdeněk Sofer

Bulk layered transition metal dichalcogenides (TMDs) show diamagnetic properties. When exfoliated, the materials' band gap increases and changes from an indirect band gap to a direct one. During the exfoliation, the TMDs may undergo a phase transition from 2H to 1T polymorph, which is likely electronically driven and accompanied by a metal-insulator transition. A significantly higher efficiency...

2017
B. Mukherjee N. Kaushik Ravi P. N. Tripathi A. M. Joseph P. K. Mohapatra S. Dhar B. P. Singh G. V. Pavan Kumar E. Simsek S. Lodha

Modulation of photoluminescence of atomically thin transition metal dichalcogenide two-dimensional materials is critical for their integration in optoelectronic and photonic device applications. By coupling with different plasmonic array geometries, we have shown that the photoluminescence intensity can be enhanced and quenched in comparison with pristine monolayer MoS2. The enhanced exciton em...

2017
Sven Borghardt Jhih-Sian Tu Florian Winkler Jürgen Schubert Willi Zander

In order to fully exploit the potential of transition metal dichalcogenide monolayers (TMD-MLs), the well-controlled creation of atomically sharp lateral heterojunctions within these materials is highly desirable. A promising approach to create such heterojunctions is the local modulation of the electronic structure of an intrinsic TMD-ML via dielectric screening induced by its surrounding mate...

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