Ultra-wideband (UWB) radio offers low power consumption, low power spectral density, high immunity against interference, and other benefits, not only for consumer electronics, but also for medical devices. A cochlear implant (CI) is an electronic hearing apparatus, requiring a wireless link through human tissue. In this paper we propose an UWB link for a data rate of 1.2Mbps and a propagation d...

We present our research on the high energy picosecond laser operating at a repetition rate of 1 kHz and the high average power picosecond laser running at 100 kHz based on bulk Nd-doped crystals. With diode-pumped solid state (DPSS) hybrid amplifiers consisting of a picosecond oscillator, a regenerative amplifier, end-pumped single-pass amplifiers, and a side-pumped amplifier, an output energy ...

This paper deals with the design of low power low noise neural signal amplifier for Epileptic Seizure Prediction. The advent of Micro-electro Arrays has driven the need for implantable electronic circuitry to detect those Extracellular neural signals (ENG). We proposed a preamplifier of fully differential Low Noise Amplifier (LNA) with gm boosting in order to enhance the gain as well as reduce ...

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Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800 nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5.0 THz. An output power of 1.54 W is achieved with a frequency difference of 0.86 THz, the output power i...

Sulfide-passivated GaAs and InP wafers were directly bonded to explore the efficiency of sulfide passivation on the bonded interfacial properties. We find that the bonded GaAs/InP interfaces after sulfide passivation contain sulfur atoms and a decreased amount of oxide species relative to the pairs bonded after conventional acid treatment; however, the residual sulfur atoms have no effect on th...

In this article, the authors show that geometric asymmetry in the layout of tunnel diodes yields asymmetry in the current-voltage I-V relationships associated with these diodes. Asymmetry improves diode performance. This effect is demonstrated for polysilicon–SiO2–Ti /Au and for Ni–NiO–Ni tunneling structures. For a polysilicon–SiO2–Ti /Au asymmetric tunneling diode ATD , sensitivity and I-V cu...

Directional control of received infrared radiation is demonstrated with a phased-array antenna connected by a coplanar strip transmission line to a metal-oxide-metal (MOM) tunnel diode. We implement a MOM diode to ensure that the measured response originates from the interference of infrared antenna currents at specific locations in the array. The reception angle of the antenna is altered by sh...